SIHB180N60E-GE3

SIHB180N60E-GE3
Mfr. #:
SIHB180N60E-GE3
メーカー:
Vishay
説明:
E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V
ライフサイクル:
メーカー新製品
データシート:
SIHB180N60E-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SIHB180N60E-GE3 詳しくは
製品属性
属性値
Tags
SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
モデル メーカー 説明 ストック 価格
SIHB180N60E-GE3
DISTI # V99:2348_22712077
Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 180 m @ 10V996
  • 5000:$1.5870
  • 2500:$1.6139
  • 1000:$1.6990
  • 500:$1.9150
  • 250:$2.2040
  • 100:$2.2720
  • 10:$2.8430
  • 1:$3.1980
SIHB180N60E-GE3
DISTI # SIHB180N60E-GE3-ND
Vishay SiliconixMOSFET N-CH D2PAK TO-263
Min Qty: 1
Container: Bulk
1020In Stock
  • 2500:$1.6159
  • 1000:$1.7010
  • 500:$2.0169
  • 100:$2.3693
  • 10:$2.8920
  • 1:$3.2200
SIHB180N60E-GE3
DISTI # 33629188
Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 180 m @ 10V996
  • 5000:$1.5870
  • 2500:$1.6139
  • 1000:$1.6990
  • 500:$1.9150
  • 250:$2.2040
  • 100:$2.2720
  • 10:$2.8430
  • 4:$3.1980
SIHB180N60E-GE3
DISTI # SIHB180N60E-GE3
Vishay Intertechnologies(Alt: SIHB180N60E-GE3)
Min Qty: 1
Europe - 0
  • 1000:€1.4048
  • 500:€1.4423
  • 100:€1.4798
  • 50:€1.5547
  • 25:€1.6483
  • 10:€1.7420
  • 1:€1.8731
SIHB180N60E-GE3
DISTI # SIHB180N60E-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SIHB180N60E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$1.5577
  • 6000:$1.6008
  • 4000:$1.6463
  • 2000:$1.7161
  • 1000:$1.7686
SIHB180N60E-GE3
DISTI # 99AC9552
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes
RoHS: Compliant
24
  • 500:$2.0100
  • 250:$2.2400
  • 100:$2.3200
  • 50:$2.4900
  • 25:$2.6500
  • 10:$2.8200
  • 1:$3.4000
SIHB180N60E-GE3
DISTI # 78-SIHB180N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
964
  • 1:$3.3800
  • 10:$2.9000
  • 100:$2.2900
  • 250:$2.2300
  • 500:$1.9700
  • 1000:$1.7300
  • 2500:$1.6400
  • 5000:$1.5800
SIHB180N60E-GE3
DISTI # 3019077
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263
RoHS: Compliant
24
  • 5000:$2.4500
  • 2500:$2.5400
  • 1000:$2.6800
  • 500:$3.1700
  • 100:$3.7300
  • 10:$4.5500
  • 1:$5.0600
SIHB180N60E-GE3
DISTI # 3019077RL
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263
RoHS: Compliant
0
  • 1000:£1.3400
  • 500:£1.6800
  • 250:£1.8600
  • 100:£1.9400
  • 10:£2.3400
  • 1:£3.1800
SIHB180N60E-GE3
DISTI # 3019077
Vishay IntertechnologiesMOSFET, N-CH, 19A, 600V, TO-263
RoHS: Compliant
24
  • 1000:£1.3400
  • 500:£1.6800
  • 250:£1.8600
  • 100:£1.9400
  • 10:£2.3400
  • 1:£3.1800
画像 モデル 説明
SIHB180N60E-GE3

Mfr.#: SIHB180N60E-GE3

OMO.#: OMO-SIHB180N60E-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB180N60E-GE3

Mfr.#: SIHB180N60E-GE3

OMO.#: OMO-SIHB180N60E-GE3-VISHAY

E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V
可用性
ストック:
Available
注文中:
4500
数量を入力してください:
SIHB180N60E-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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