SIRA90DP-T1-GE3

SIRA90DP-T1-GE3
Mfr. #:
SIRA90DP-T1-GE3
メーカー:
Vishay
説明:
MOSFET N-CH 30V 100A POWERPAKSO
ライフサイクル:
メーカー新製品
データシート:
SIRA90DP-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
SIRA9, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
MOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 30V 100A POWERPAKSO
***ark
MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):650µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CA-N, 30V, 100A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):650µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:104W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
モデル メーカー 説明 ストック 価格
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 100A POWERPAKSO
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.5264
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3
Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA90DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4819
  • 30000:$0.4949
  • 18000:$0.5089
  • 12000:$0.5309
  • 6000:$0.5469
SIRA90DP-T1-GE3
DISTI # SIRA90DP-T1-GE3
Vishay IntertechnologiesMOSFET N-Channel 30V 100A 8-Pin PowerPAK SO T/R (Alt: SIRA90DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.5249
  • 500:€0.5319
  • 100:€0.5409
  • 50:€0.5489
  • 25:€0.6209
  • 10:€0.7659
  • 1:€1.0679
SIRA90DP-T1-GE3
DISTI # 20AC3876
Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.4780
  • 6000:$0.4890
  • 4000:$0.5080
  • 2000:$0.5640
  • 1000:$0.6210
  • 1:$0.6470
SIRA90DP-T1-GE3
DISTI # 15AC8636
Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):650µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes0
  • 500:$0.7220
  • 250:$0.7810
  • 100:$0.8390
  • 50:$0.9270
  • 25:$1.0100
  • 10:$1.1000
  • 1:$1.3300
SIRA90DP-T1-GE3
DISTI # 78-SIRA90DP-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 100A Id Qg 48nC Typ.
RoHS: Compliant
967
  • 1:$1.3100
  • 10:$1.0800
  • 100:$0.8310
  • 500:$0.7150
  • 1000:$0.5640
SIRA90DP-T1-GE3
DISTI # 2749593
Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO0
  • 500:£0.5610
  • 250:£0.6070
  • 100:£0.6530
  • 25:£0.8490
  • 5:£0.9410
SIRA90DP-T1-GE3
DISTI # 2749593
Vishay IntertechnologiesMOSFET, N-CH, 30V, 100A, POWERPAK SO
RoHS: Compliant
0
  • 1000:$0.8850
  • 500:$0.9380
  • 250:$1.1100
  • 100:$1.3400
  • 10:$1.7200
  • 1:$2.0700
画像 モデル 説明
SIRA90DP-T1-RE3

Mfr.#: SIRA90DP-T1-RE3

OMO.#: OMO-SIRA90DP-T1-RE3

MOSFET 30V Vds TrenchFET PowerPAK SO-8
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3

MOSFET 30V Vds 100A Id Qg 48nC Typ.
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3-VISHAY

MOSFET N-CH 30V 100A POWERPAKSO
SIRA90DP-T1-RE3

Mfr.#: SIRA90DP-T1-RE3

OMO.#: OMO-SIRA90DP-T1-RE3-VISHAY

MOSFET N-CH 30V 100A POWERPAKSO
可用性
ストック:
Available
注文中:
2000
数量を入力してください:
SIRA90DP-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.72
$0.72
10
$0.68
$6.81
100
$0.65
$64.53
500
$0.61
$304.75
1000
$0.57
$573.60
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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