IPI086N10N3 G

IPI086N10N3 G
Mfr. #:
IPI086N10N3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI086N10N3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-262-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
8.2 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Tube
Height:
9.45 mm
Length:
10.2 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
4.5 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
42 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
31 ns
Typical Turn-On Delay Time:
18 ns
Part # Aliases:
IPI086N10N3GXKSA1 IPI86N1N3GXK SP000683070
Unit Weight:
0.073511 oz
Tags
IPI086N10N3G, IPI086N10N3, IPI086, IPI08, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
IPI086N10N3GXKSA1
DISTI # IPI086N10N3GXKSA1-ND
Infineon Technologies AGMOSFET N-CH 100V 80A TO262-3
RoHS: Compliant
Min Qty: 1
Container: Tube
609In Stock
  • 1000:$0.7219
  • 500:$0.9144
  • 100:$1.1791
  • 10:$1.4920
  • 1:$1.6800
IPI086N10N3GXK
DISTI # IPI086N10N3GXKSA1
Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 1000
  • 1000:$0.5039
  • 2000:$0.4859
  • 3000:$0.4679
  • 5000:$0.4519
  • 10000:$0.4439
IPI086N10N3G
DISTI # SP000683070
Infineon Technologies AGTrans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: SP000683070)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€0.9089
  • 10:€0.7089
  • 25:€0.6329
  • 50:€0.5759
  • 100:€0.5589
  • 500:€0.5479
  • 1000:€0.5399
IPI086N10N3GXKSA1
DISTI # 34AC1700
Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes361
  • 1:$1.6800
  • 10:$1.4900
  • 100:$1.1800
  • 500:$0.9140
  • 1000:$0.7210
IPI086N10N3GInfineon Technologies AGPower Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
15500
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
IPI086N10N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
800
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
IPI086N10N3 G
DISTI # 726-IPI086N10N3G
Infineon Technologies AGMOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3
RoHS: Compliant
398
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9410
IPI086N10N3GInfineon Technologies AG 2000
    IPI086N10N3GXKSA1
    DISTI # 8922166
    Infineon Technologies AGMOSFET N-CHANNEL 100V 80A OPTIMOS TO262, PK340
    • 5:£1.1120
    • 10:£0.8900
    • 100:£0.6800
    • 500:£0.6020
    • 1250:£0.4740
    IPI086N10N3GXKSA1
    DISTI # IPI086N10N3GXKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO262-3206
    • 1:$1.2370
    • 3:$1.0655
    • 10:$0.8559
    • 100:$0.7432
    • 1000:$0.6920
    IPI086N10N3GXKSA1
    DISTI # 2781092
    Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-262
    RoHS: Compliant
    361
    • 5:£0.8900
    • 25:£0.7850
    • 100:£0.6800
    • 250:£0.6410
    • 500:£0.6020
    IPI086N10N3GXKSA1
    DISTI # 2781092
    Infineon Technologies AGMOSFET, N-CH, 100V, 80A, TO-262
    RoHS: Compliant
    361
    • 5:$2.5000
    • 25:$2.1800
    • 100:$1.7700
    • 250:$1.5000
    • 500:$1.3000
    • 1000:$1.2300
    • 5000:$1.1600
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    Availability
    Stock:
    783
    On Order:
    2766
    Enter Quantity:
    Current price of IPI086N10N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.43
    $1.43
    10
    $1.22
    $12.20
    100
    $0.94
    $94.10
    500
    $0.83
    $416.00
    1000
    $0.66
    $657.00
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