IPG20N06S2L50AATMA1

Mfr. #:: IPG20N06S2L50AATMA1
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
ライフサイクル:: メーカー新製品
データシート:: IPG20N06S2L50AATMA1 データシート
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-アレイ

シリーズ: Automotive, AEC-Q101, OptiMOS

包装: テープ＆リール（TR）

パーツエイリアス: IPG20N06S2L-50A SP001023842

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-PowerVDFN

テクノロジー: Si

作動温度: -55°C ~ 175°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PG-TDSON-8-10

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 51W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 55V

入力-静電容量-Ciss-Vds: 560pF @ 25V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 20A

Rds-On-Max-Id-Vgs: 50 mOhm @ 15A, 10V

Vgs-th-Max-Id: 2V @ 19μA

ゲートチャージ-Qg-Vgs: 17nC @ 10V

Pd-電力損失: 51 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 20 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 55 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 50 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 15 ns

典型的なターンオン遅延時間: 2 ns

Qg-Gate-Charge: 13 nC

チャネルモード: 強化

Tags: IPG20N06S2, IPG20N06, IPG20N0, IPG20, IPG2, IPG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPG20N06S2L50AATMA1 説明

***ineon SCT: 55V, Dual N-Ch, 50 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™, PG-TDSON-8, RoHS

***ical: Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R

***ineon: Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI) | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting

Market price

モデル	メーカー	説明	ストック	価格
IPG20N06S2L50AATMA1 DISTI # IPG20N06S2L50AATMA1-ND	Infineon Technologies AG	MOSFET 2N-CH 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.6169
IPG20N06S2L50AATMA1 DISTI # IPG20N06S2L50AATMA1	Infineon Technologies AG	Trans MOSFET N-CH 55V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S2L50AATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.6069 10000:$0.5849 20000:$0.5639 30000:$0.5449 50000:$0.5349
IPG20N06S2L50AATMA1 DISTI # SP001023842	Infineon Technologies AG	Trans MOSFET N-CH 55V 20A 8-Pin TDSON T/R (Alt: SP001023842) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.9489 10000:€0.7959 20000:€0.6649 30000:€0.5789 50000:€0.5429
IPG20N06S2L50AATMA1 DISTI # 726-IPG20N06S2L50AAT	Infineon Technologies AG	MOSFET N-Ch 55V 20A TDSON-8 RoHS: Compliant	0	1:$1.3800 10:$1.1800 100:$0.9070 500:$0.8020 1000:$0.6330 5000:$0.5610 10000:$0.5400

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