SI3851DV-T1-GE3

Mfr. #:: SI3851DV-T1-GE3
メーカー:: Vishay / Siliconix
説明:: RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
ライフサイクル:: メーカー新製品
データシート:: SI3851DV-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SI3851DV-T1-GE3 詳しくは

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: ICチップ

包装: リール

パーツエイリアス: SI3851DV-GE3

単位重量: 0.000705 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TSOP-6

テクノロジー: Si

チャネル数: 1 Channel

構成: ショットキーダイオード付きシングル

トランジスタタイプ: 1 P-Channel

Pd-電力損失: 830 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1.6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 30 V

Rds-On-Drain-Source-Resistance: 200 mOhms

トランジスタ-極性: Pチャネル

Tags: SI3851DV-T, SI3851, SI385, SI38, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3851DV-T1-GE3 説明

***et: P-CH TSOP-6 30V 200MOHM @ 10V W/ 0.5A SCHOTTKY DIODE

***ment14 APAC: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V

***ark: P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel / Schottky Diode; Continuous Drain Current, Id:1.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes

SI3851DV-T1-GE3 詳しくは

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI3851DV-T1-GE3 DISTI # SI3851DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V ±1.6A 8-Pin TSOP T/R - Tape and Reel (Alt: SI3851DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3629 6000:$0.3529 12000:$0.3379 18000:$0.3289 30000:$0.3199
SI3851DV-T1-GE3 DISTI # 781-SI3851DV-GE3	Vishay Intertechnologies	MOSFET 30V 1.8A 1.15W 200mohm @ 10V RoHS: Compliant	0	3000:$0.3500 6000:$0.3330 9000:$0.3210 24000:$0.3100

関連製品

画像	モデル	説明
	Mfr.#: SI3851DV-T1-GE3 OMO.#: OMO-SI3851DV-T1-GE3	MOSFET 30V 1.8A 1.15W 200mohm @ 10V
	Mfr.#: SI3851DV-T1-E3 OMO.#: OMO-SI3851DV-T1-E3	MOSFET 30V 1.8A 1.15W
	Mfr.#: SI3851DV-T1-GE3 OMO.#: OMO-SI3851DV-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
	Mfr.#: SI3851DV OMO.#: OMO-SI3851DV-1190	ブランドニューオリジナル
	Mfr.#: SI3851DV-T1 OMO.#: OMO-SI3851DV-T1-1190	ブランドニューオリジナル
	Mfr.#: SI3851DV-T1-E3 OMO.#: OMO-SI3851DV-T1-E3-VISHAY	MOSFET P-CH 30V 1.6A 6-TSOP
	Mfr.#: SI3851DV-T1-ES OMO.#: OMO-SI3851DV-T1-ES-1190	ブランドニューオリジナル