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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BSP603S2LHUMA1 DISTI # V36:1790_06390875 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 0 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1-ND | Infineon Technologies AG | MOSFET N-CH 55V 5.2A SOT-223 RoHS: Not compliant Min Qty: 4000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP603S2LHUMA1 DISTI # 16651955 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant | 84 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: BSP603S2L) RoHS: Not Compliant Min Qty: 4000 Container: Tape and Reel | Asia - 8000 |
|
| BSP603S2LHUMA1 DISTI # BSP603S2LHUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP603S2LHUMA1) RoHS: Compliant Min Qty: 4000 Container: Reel | Americas - 0 |
|
| BSP603S2LHUMA1 DISTI # SP000431792 | Infineon Technologies AG | Trans MOSFET N-CH 55V 5.2A 4-Pin SOT-223 T/R (Alt: SP000431792) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel | Europe - 0 |
|
| BSP603S2L DISTI # 726-BSP603S2L | Infineon Technologies AG | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS RoHS: Compliant | 0 | |
| BSP603S2LNT | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 83663 |
|
| BSP603S2LHUMA1 DISTI # 4622935 | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, PK | 940 |
|
| BSP603S2LHUMA1 DISTI # 4622935P | Infineon Technologies AG | MOSFET N-CHANNEL 55V 5.2A SOT223, RL | 9071 |
|
| BSP603S2L DISTI # BSP603S2L | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,55V,5.2A,1.8W,SOT223 | 3809 |
|
| BSP603S2L | Infineon Technologies AG | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1395 |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BSP61E6327HTSA1132 OMO.#: OMO-BSP61E6327HTSA1132-1190 |
- Bulk (Alt: BSP61E6327HTSA1132) |
|
|
Mfr.#: BSP603S2LGRN OMO.#: OMO-BSP603S2LGRN-1190 |
New and Original |
|
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Mfr.#: BSP61. OMO.#: OMO-BSP61--1190 |
New and Original |
|
|
Mfr.#: BSP612P OMO.#: OMO-BSP612P-1190 |
New and Original |
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Mfr.#: BSP613P E6327 OMO.#: OMO-BSP613P-E6327-1190 |
New and Original |
|
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Mfr.#: BSP613PL6327 OMO.#: OMO-BSP613PL6327-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
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Mfr.#: BSP61E6327XT OMO.#: OMO-BSP61E6327XT-1190 |
New and Original |
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Mfr.#: BSP62E7874 OMO.#: OMO-BSP62E7874-1190 |
New and Original |
|
|
Mfr.#: BSP62T1 OMO.#: OMO-BSP62T1-1190 |
New and Original |
|
|
Mfr.#: BSP613PE6327 OMO.#: OMO-BSP613PE6327-1190 |
New and Original |
