We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IPB021N06N3GATMA1 DISTI # IPB021N06N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB021N06N3GATMA1 DISTI # IPB021N06N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB021N06N3GATMA1 DISTI # IPB021N06N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB021N06N3 G DISTI # IPB021N06N3G | Infineon Technologies AG | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB021N06N3G) RoHS: Not Compliant Min Qty: 224 Container: Bulk | Americas - 0 |
|
| IPB021N06N3 G DISTI # 726-IPB021N06N3G | Infineon Technologies AG | MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant | 0 | |
| IPB021N06N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 479 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: IPB021N04N OMO.#: OMO-IPB021N04N-1190 |
New and Original |
|
|
Mfr.#: IPB021N04NG OMO.#: OMO-IPB021N04NG-1190 |
New and Original |
|
|
Mfr.#: IPB021N04NGATMA1 OMO.#: OMO-IPB021N04NGATMA1-1190 |
New and Original |
|
|
Mfr.#: IPB021N06N3 OMO.#: OMO-IPB021N06N3-1190 |
New and Original |
|
|
Mfr.#: IPB021N06N3G OMO.#: OMO-IPB021N06N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB021N06N3GATMA1 |
MOSFET N-CH 60V 120A TO263-3 |
|
|
Mfr.#: IPB021N06N3 G OMO.#: OMO-IPB021N06N3-G-126 |
IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 |
