DMN3190LDW-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

1 A

Rds On - Drain-Source Resistance:

190 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.8 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

2 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

320 mW

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN31

Transistor Type:

2 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

700 nS

Fall Time:

15.6 ns

Product Type:

MOSFET

Rise Time:

8.9 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

30.3 ns

Typical Turn-On Delay Time:

4.5 ns

Unit Weight:

0.000265 oz

Tags

DMN319, DMN31, DMN3, DMN