SEMIX202GB066HDS

Mfr. #:: SEMIX202GB066HDS
メーカー:: SEMIKRON
説明:: IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
ライフサイクル:: メーカー新製品
データシート:: SEMIX202GB066HDS データシート
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製品属性
属性値

Tags: SEMIX202, SEMIX20, SEMIX2, SEMIX, SEMI, SEM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SEMIX202GB066HDS 説明

***(Formerly Allied Electronics): IGBT Module; NPT; Trench; 600V; SEMIX 2

***ikron: Features: Homogeneous Si Trench = Trenchgate technology V CE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications: Matrix Converter Resonant Inverter Current Source Inverter

***ark: IGBT MODULE, DUAL, 600V, 275A; Continuous Collector Current:275A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:600V RoHS Compliant: Yes

***ment14 APAC: IGBT MODULE, 2X600V; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:274A; Collector Emitter Voltage Vces:1.9V; Collector Emitter Voltage V(br)ceo:1V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:SEMiX 2s; No. of Pins:16; SVHC:No SVHC (20-Jun-2011); Av Current Ic:275A; Current Ic Continuous a Max:275A; Forward Surge Current Ifsm Max:1000A; Package / Case:SEMiX 2s; Pulsed Current Icm:400A; Repetitive Reverse Voltage Vrrm Max:600V; Rise Time:80ns; Termination Type:Screw; Voltage Vces:600V

***ical: Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray

***ark: Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes

***ineon: EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

***et Europe: EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3

***ment14 APAC: IGBT, LOW POWER, 600V, 50A, EASYPACK; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:205W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:18; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:205W

***ineon: EasyPACK 1B 600V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups; majorhomeapplicances

***ure Electronics: BSM200GB60 Series 600 V 230 A 730 W Chassis Mount IGBT Module

***trelec: IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: 34 mm Collector-emitter saturation voltage: 2.45 V Collector-emitter voltage: 600 V Energy dissipation during make-time: 4.6 mJ Energy dissipation during turn-off time: 6.3 mJ

***ineon: Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; ups

***et: Motor / Motion / Ignition Controllers & Drivers 600V/50A

***inecomponents.com: 600V, 50A IGBT Module (Molding Type)

***el Electronic: IC REG CONV DDR BUS 1OUT 8MSOP

***omponent: Fairchild Semiconductor power module

***nell: IGBT MODULE, 600V, 50A; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:600V; Current, Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.8V; Power Dissipation:250W; Case Style:7PM-GA; Termination Type:Screw; Centres, Fixing:80mm; Current, Icm Pulsed:100A; Depth, External:93mm; Diameter, Fixing Hole:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:250W; Time, Rise:30ns; Transistors, No. of:2; Voltage, Vceo:600V

***et: Trans IGBT Module N-CH 600V 100A 7-Pin EPM Rail

***el Electronic: IGBT MODULE 600V 100A 400W EPM7

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ark: Igbt Array & Module Transistor, N Channel, 75 A, 2.8 V, 310 W, 600 V, 7Pm-Ga

***Yang: IGBT Module Half Bridge 600V 75A 310W Chassis Mount 7PM-GA - Bulk

***inecomponents.com: 600V, 75A IGBT Module (Molding Type)

***el Electronic: IGBT MODULE 600V 75A 310W 7PMGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: IGBT MODULE, 600V, 75A; Transistor Type:IGBT Module; Transistor Polarity:NPN; Voltage, Vces:600V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:2.8V; Power Dissipation:310W; Case Style:7PM-GA; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:150A; External Depth:93mm; Fixing Centres:80mm; Fixing Hole Diameter:5.4mm; Pin Configuration:C2E1, E2, C1, G2, E2, E1, G1; Power, Pd:310W; Time, Rise:40ns; Transistors, No. of:2

Market price

モデル	メーカー	説明	価格
SEMIX202GB066HDS DISTI # 01P3986	SEMIKRON	IGBT MODULE, DUAL, 600V, 275A,Transistor Polarity:Dual NPN,DC Collector Current:275A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:45W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:- RoHS Compliant: Yes	100:$65.8200 50:$70.0300 25:$71.0800 10:$72.1300 5:$74.2400 1:$76.3500
SEMIX202GB066HDS DISTI # 70098306	SEMIKRON	IGBT Module,NPT,Trench,600V,SEMIX 2 RoHS: Compliant	1:$106.5000 6:$100.7800 30:$95.6900 96:$91.0600 144:$86.8700
SEMIX202GB066HDS DISTI # 1300546	SEMIKRON	RoHS: Compliant	2500:$110.5800 1000:$114.2000 250:$120.1100 500:$120.1100 100:$122.2100 25:$126.6600 10:$129.0000 1:$133.9600

画像	モデル	説明
	Mfr.#: SEMIX202GB066HD OMO.#: OMO-SEMIX202GB066HD-1190	ブランドニューオリジナル
	Mfr.#: SEMIX202GB066HDS OMO.#: OMO-SEMIX202GB066HDS-1190	IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b
	Mfr.#: SEMIX202GB128D OMO.#: OMO-SEMIX202GB128D-1190	ブランドニューオリジナル
	Mfr.#: SEMIX202GB128DS OMO.#: OMO-SEMIX202GB128DS-1190	ブランドニューオリジナル
	Mfr.#: SEMIX202GB12E4S OMO.#: OMO-SEMIX202GB12E4S-1190	ブランドニューオリジナル
	Mfr.#: SEMIX202GB12T4S OMO.#: OMO-SEMIX202GB12T4S-1190	ブランドニューオリジナル
	Mfr.#: SEMIX202GB12V4S OMO.#: OMO-SEMIX202GB12V4S-1190	ブランドニューオリジナル
	Mfr.#: SEMIX202GB12VS OMO.#: OMO-SEMIX202GB12VS-1190	IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:

SEMIX202GB066HDS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes