CSD75301W1015

CSD75301W1015
Mfr. #:
CSD75301W1015
Description:
MOSFET P-Ch-Dual Common Source Pwr MOSFETs
Lifecycle:
New from this manufacturer.
Datasheet:
CSD75301W1015 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD75301W1015 more Information CSD75301W1015 Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DSBGA-6
Number of Channels:
2 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
1.2 A
Rds On - Drain-Source Resistance:
100 mOhms
Vgs - Gate-Source Voltage:
8 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
800 mW
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
NexFET
Packaging:
Reel
Height:
0.625 mm
Length:
1.5 mm
Product:
MOSFET Small Signal
Series:
CSD75301W1015
Transistor Type:
2 P-Channel
Width:
1 mm
Brand:
Texas Instruments
Fall Time:
16 ns
Product Type:
MOSFET
Rise Time:
1.7 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
38 ns
Typical Turn-On Delay Time:
3 ns
Unit Weight:
0.000060 oz
Tags
CSD75, CSD7, CSD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel Dual Common Source NexFET™ Power MOSFET 6-DSBGA -55 to 150
***ical
Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R
***et
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 20V 1.2A 6DSBGA
***th Star Micro
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
***ark
P CH DUAL COMMON SOURCE POWER MOSFET, -20V, -1.2A, DSBGA-6; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; Module Configuration:Dual P Channel; On Resistance Rds(on):0.08ohm; Power Dissipation Pd:800mW
***nell
MOSFET, 2 CANALI P, 20V, 1.2A, 6DSBGA; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-1.2A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:800mW; Modello Case Transistor:DSBGA; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Configurazione Modulo:Doppio a Canale P; Corrente Continua di Drain Id, Canale P:-1.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza di Attivazione Rds(on), Canale P:0.15ohm; Temperatura di Esercizio Min:-55°C; Tensione Drain Source Vds, Canale P:-20V
Part # Description Stock Price
CSD75301W1015
DISTI # 296-24261-2-ND
MOSFET 2P-CH 20V 1.2A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    CSD75301W1015
    DISTI # 296-24261-1-ND
    MOSFET 2P-CH 20V 1.2A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      CSD75301W1015
      DISTI # 296-24261-6-ND
      MOSFET 2P-CH 20V 1.2A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        CSD75301W1015
        DISTI # CSD75301W1015
        Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD75301W1015)
        RoHS: Compliant
        Min Qty: 962
        Americas - 0
        • 962:$0.3769
        • 964:$0.3589
        • 1926:$0.3469
        • 4810:$0.3349
        • 9620:$0.3259
        CSD75301W1015
        DISTI # 595-CSD75301W1015
        MOSFET P-Ch-Dual Common Source Pwr MOSFETs
        RoHS: Compliant
        0
          CSD75301W1015Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          1760
          • 1000:$0.3800
          • 500:$0.4000
          • 100:$0.4200
          • 25:$0.4400
          • 1:$0.4700
          CSD75301W1015
          DISTI # 1892455
          MOSFET, PP CH, 20V, 1.2A, 6DSBGA
          RoHS: Compliant
          988
          • 5:£0.6490
          • 25:£0.5860
          • 100:£0.4450
          • 250:£0.4190
          • 500:£0.3940
          Image Part # Description
          CSD75301W1015

          Mfr.#: CSD75301W1015

          OMO.#: OMO-CSD75301W1015

          MOSFET P-Ch-Dual Common Source Pwr MOSFETs
          CSD75301W1015

          Mfr.#: CSD75301W1015

          OMO.#: OMO-CSD75301W1015-TEXAS-INSTRUMENTS

          IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs
          Availability
          Stock:
          Available
          On Order:
          4500
          Enter Quantity:
          Current price of CSD75301W1015 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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