SCT2H12NZGC11

SCT2H12NZGC11
Mfr. #:
SCT2H12NZGC11
メーカー:
Rohm Semiconductor
説明:
MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
ライフサイクル:
メーカー新製品
データシート:
SCT2H12NZGC11 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SCT2H12NZGC11 詳しくは
製品属性
属性値
メーカー:
ロームセミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-3PFM-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
1700 V
Id-連続ドレイン電流:
3.7 A
Rds On-ドレイン-ソース抵抗:
1.15 Ohms
Vgs th-ゲート-ソースしきい値電圧:
1.6 V
Vgs-ゲート-ソース間電圧:
- 6 V, 22 V
Qg-ゲートチャージ:
14 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
35 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
製品:
パワーMOSFET
シリーズ:
SCT2x
トランジスタタイプ:
1 N-Channel
タイプ:
NチャネルSiCパワーMOSFET
ブランド:
ロームセミコンダクター
フォワード相互コンダクタンス-最小:
0.4 s
立ち下がり時間:
74 ns
製品タイプ:
MOSFET
立ち上がり時間:
21 ns
ファクトリーパックの数量:
30
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
35 ns
典型的なターンオン遅延時間:
16 ns
パーツ番号エイリアス:
SCT2H12NZ
単位重量:
0.402300 oz
Tags
SCT2H, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM
***ical
Trans MOSFET N-CH SiC 1.7KV 3.7A 3-Pin(3+Tab) TO-3PFM Tube
***ark
Mosfet, N-Ch, 1.7Kv, To-3Pfm; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):1.15Ohm; No. Of Pins:3Pins; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
1700V N-Channel SiC Power MOSFET
ROHM 1700V N-Channel SiC Power MOSFET offers a drain-source breakdown voltage of 1700V and a continuous drain current of 3.7A. The MOSFET features a low on-resistance, fast switching speed, and long creepage distance, making it ideal for auxiliary power supplies and switch mode power supplies. Learn More
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
モデル メーカー 説明 ストック 価格
SCT2H12NZGC11
DISTI # 30614319
ROHM Semiconductor0504
  • 4:$7.6625
SCT2H12NZGC11
DISTI # SCT2H12NZGC11-ND
ROHM SemiconductorMOSFET N-CH 1700V 3.7A
RoHS: Compliant
Min Qty: 1
Container: Tube
668In Stock
  • 2520:$3.3250
  • 510:$3.8750
  • 120:$4.4500
  • 30:$5.1250
  • 10:$5.3750
  • 1:$5.9500
SCT2H12NZGC11
DISTI # C1S625901603314
ROHM SemiconductorMOSFETs504
  • 200:$4.4000
  • 50:$5.3100
  • 10:$5.3600
  • 1:$6.1300
SCT2H12NZGC11
DISTI # SCT2H12NZGC11
ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11)
Min Qty: 450
Americas - 0
  • 2700:$3.1900
  • 4500:$3.1900
  • 1800:$3.3900
  • 900:$3.6900
  • 450:$3.8900
SCT2H12NZGC11
DISTI # SCT2H12NZGC11
ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Asia - 0
    SCT2H12NZGC11
    DISTI # SCT2H12NZGC11
    ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube (Alt: SCT2H12NZGC11)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€3.3800
    • 500:€3.4500
    • 250:€3.5200
    • 100:€3.5900
    • 10:€3.6700
    • 1:€4.8700
    SCT2H12NZGC11
    DISTI # SCT2H12NZGC11
    ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube - Rail/Tube (Alt: SCT2H12NZGC11)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube
    Americas - 0
      SCT2H12NZGC11
      DISTI # 79Y4716
      ROHM SemiconductorTrans MOSFET N-CH 1.7KV 3.7A 3-Pin TO-3PFM Tube - Bulk (Alt: 79Y4716)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk
      Americas - 0
      • 500:$3.8800
      • 250:$4.2600
      • 100:$4.4500
      • 50:$4.7900
      • 25:$5.1300
      • 10:$5.3800
      • 1:$5.9500
      SCT2H12NZGC11
      DISTI # 79Y4716
      ROHM SemiconductorMOSFET, N-CH, 1.7KV, TO-3PFM,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,No. of Pins:3PinsRoHS Compliant: Yes1
      • 250:$4.2900
      • 100:$4.4900
      • 50:$4.8300
      • 25:$5.1700
      • 10:$5.4200
      • 1:$6.0000
      SCT2H12NZGC11
      DISTI # 755-SCT2H12NZGC11
      ROHM SemiconductorMOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
      RoHS: Compliant
      166
      • 1:$5.9400
      • 10:$5.3700
      • 25:$5.1200
      • 100:$4.4500
      • 250:$4.2500
      SCT2H12NZGC11
      DISTI # TMOS1097
      ROHM SemiconductorSiC-N 1700V 1150mOhm 3.7A TO3PF
      RoHS: Compliant
      Stock DE - 0Stock HK - 0Stock US - 0
      • 450:$4.2200
      SCT2H12NZGC11ROHM Semiconductor 480
      • 1:¥359.7597
      • 100:¥150.3076
      • 450:¥75.3492
      SCT2H12NZGC11
      DISTI # 2531101
      ROHM SemiconductorMOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM323
      • 100:£3.5700
      • 50:£3.8400
      • 10:£4.1100
      • 5:£4.7600
      • 1:£5.2600
      SCT2H12NZGC11
      DISTI # 2531101
      ROHM SemiconductorMOSFET, N-CH, 1.7KV, 3.7A, TO-3PFM
      RoHS: Compliant
      413
      • 120:$6.7100
      • 30:$7.7300
      • 10:$8.1000
      • 1:$8.9700
      SCT2H12NZGC11ROHM SemiconductorMOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC
      RoHS: Compliant
      Americas - 5040
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        可用性
        ストック:
        109
        注文中:
        2092
        数量を入力してください:
        SCT2H12NZGC11の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $5.94
        $5.94
        10
        $5.37
        $53.70
        25
        $5.12
        $128.00
        100
        $4.45
        $445.00
        250
        $4.25
        $1 062.50
        2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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