 |  |  | |
| PartNumber | SCT2H12NYTB | SCT2H12NZGC11 | SCT2H12NY |
| Description | MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide | MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | SiC | SiC | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-268-3 | TO-3PFM-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1700 V | 1700 V | - |
| Id Continuous Drain Current | 4 A | 3.7 A | - |
| Rds On Drain Source Resistance | 1.15 Ohms | 1.15 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | 1.6 V | - |
| Vgs Gate Source Voltage | 22 V | - 6 V, 22 V | - |
| Qg Gate Charge | 14 nC | 14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 44 W | 35 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | - |
| Series | SCT2x | SCT2x | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Forward Transconductance Min | 400 mS | 0.4 s | - |
| Fall Time | 74 ns | 74 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 21 ns | 21 ns | - |
| Factory Pack Quantity | 800 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 35 ns | - |
| Typical Turn On Delay Time | 16 ns | 16 ns | - |
| Part # Aliases | SCT2H12NY | SCT2H12NZ | - |
| Unit Weight | 0.141096 oz | 0.402300 oz | - |
| Product | - | Power MOSFETs | - |
| Type | - | N-Channel SiC Power MOSFET | - |