IPW60R199CPFKSA1

IPW60R199CPFKSA1
Mfr. #:
IPW60R199CPFKSA1
メーカー:
Infineon Technologies
説明:
MOSFET N-CH 600V 16A TO-247
ライフサイクル:
メーカー新製品
データシート:
IPW60R199CPFKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
XPW60R199
包装
チューブ
パーツエイリアス
IPW60R199CP IPW60R199CPXK SP000089802
商標名
CoolMOS
パッケージ-ケース
TO-247-3
テクノロジー
Si
チャネル数
1 Channel
トランジスタタイプ
1 N-Channel
トランジスタ-極性
Nチャネル
Tags
IPW60R199C, IPW60R199, IPW60R19, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 16A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, 600V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):199mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:139W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; Current Id Max:16A; Package / Case:TO-247; Power Dissipation Pd:139W; Power Dissipation Pd:139W; Pulse Current Idm:51A; Termination Type:SMD; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, 's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
モデル メーカー 説明 ストック 価格
IPW60R199CPFKSA1
DISTI # IPW60R199CPFKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 16A TO-247
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
  • 240:$3.8995
IPW60R199CPFKSA1
DISTI # IPW60R199CPFKSA1
Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS - Rail/Tube (Alt: IPW60R199CPFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$2.1900
  • 480:$2.1900
  • 960:$2.0900
  • 1440:$1.9900
  • 2400:$1.9900
IPW60R199CPFKSA1
DISTI # 61M6809
Infineon Technologies AGMOSFET, N CH, 650V, 16A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.18ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    IPW60R199CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247
    RoHS: Compliant
    236
    • 1000:$1.9200
    • 500:$2.0200
    • 100:$2.1100
    • 25:$2.2000
    • 1:$2.3600
    IPW60R199CP
    DISTI # 726-IPW60R199CP
    Infineon Technologies AGMOSFET N-Ch 650V 16A TO247-3 CoolMOS CP
    RoHS: Compliant
    0
    • 1:$4.2200
    • 10:$3.5800
    • 100:$3.1100
    • 250:$2.9500
    • 500:$2.6400
    IPW60R199CPFKSA1
    DISTI # 726-IPW60R199CPFKSA1
    Infineon Technologies AGMOSFET N-Ch 650V 16A TO247-3 CoolMOS CP
    RoHS: Compliant
    0
    • 1:$4.2200
    • 10:$3.5800
    • 100:$3.1100
    • 250:$2.9500
    • 500:$2.6400
    IPW60R199CPFKSA1
    DISTI # 8577113
    Infineon Technologies AGMOSFET N-CH 650V 16A COOLMOS TO-247, TU210
    • 480:£1.4440
    • 240:£1.4760
    IPW60R199CPFKSA1
    DISTI # IPW60R199CPFKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,16A,139W,PG-TO247-3177
    • 1:$4.3700
    • 3:$3.7600
    • 10:$3.0200
    • 30:$2.6300
    IPW60R199CPFKSA1
    DISTI # 1471756
    Infineon Technologies AGMOSFET, N, 600V, TO-247
    RoHS: Compliant
    0
    • 100:$4.9400
    • 10:$5.6900
    • 1:$6.6900
    画像 モデル 説明
    IPW60R190P6

    Mfr.#: IPW60R190P6

    OMO.#: OMO-IPW60R190P6

    MOSFET HIGH POWER_PRC/PRFRM
    IPW60R190

    Mfr.#: IPW60R190

    OMO.#: OMO-IPW60R190-1190

    ブランドニューオリジナル
    IPW60R190E6,IPW60R165CP,

    Mfr.#: IPW60R190E6,IPW60R165CP,

    OMO.#: OMO-IPW60R190E6-IPW60R165CP--1190

    ブランドニューオリジナル
    IPW60R190P6

    Mfr.#: IPW60R190P6

    OMO.#: OMO-IPW60R190P6-1190

    - Bulk (Alt: IPW60R190P6)
    IPW60R190P6,60R190

    Mfr.#: IPW60R190P6,60R190

    OMO.#: OMO-IPW60R190P6-60R190-1190

    ブランドニューオリジナル
    IPW60R190P6FKSA1

    Mfr.#: IPW60R190P6FKSA1

    OMO.#: OMO-IPW60R190P6FKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 600V 20.2A TO247
    IPW60R199

    Mfr.#: IPW60R199

    OMO.#: OMO-IPW60R199-1190

    ブランドニューオリジナル
    IPW60R199CP(6R199P)

    Mfr.#: IPW60R199CP(6R199P)

    OMO.#: OMO-IPW60R199CP-6R199P--1190

    ブランドニューオリジナル
    IPW60R199CP/6R199

    Mfr.#: IPW60R199CP/6R199

    OMO.#: OMO-IPW60R199CP-6R199-1190

    ブランドニューオリジナル
    IPW60R190C6

    Mfr.#: IPW60R190C6

    OMO.#: OMO-IPW60R190C6-124

    Darlington Transistors MOSFET N-Ch 600V 20.2A TO247-3 CoolMOS C6
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    IPW60R199CPFKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.88
    $2.88
    10
    $2.74
    $27.36
    100
    $2.59
    $259.20
    500
    $2.45
    $1 224.00
    1000
    $2.30
    $2 304.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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