SIA517DJ-T1-GE3

SIA517DJ-T1-GE3
Mfr. #:
SIA517DJ-T1-GE3
メーカー:
Vishay
説明:
MOSFET N/P-CH 12V 4.5A SC-70-6
ライフサイクル:
メーカー新製品
データシート:
SIA517DJ-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SIA517DJ-T1-GE3 詳しくは
製品属性
属性値
メーカー
VISHAY
製品カテゴリ
FET-アレイ
シリーズ
TrenchFETR
包装
Digi-ReelR代替パッケージ
パーツエイリアス
SIA517DJ-GE3
単位重量
0.000988 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
PowerPAKR SC-70-6 Dual
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
2 Channel
サプライヤー-デバイス-パッケージ
PowerPAKR SC-70-6 Dual
構成
1 N-Channel 1 P-Channel
FETタイプ
NおよびPチャネル
パワーマックス
6.5W
トランジスタタイプ
1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss
12V
入力-静電容量-Ciss-Vds
500pF @ 6V
FET機能
ロジックレベルゲート
Current-Continuous-Drain-Id-25°C
4.5A
Rds-On-Max-Id-Vgs
29 mOhm @ 5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
ゲートチャージ-Qg-Vgs
15nC @ 8V
Pd-電力損失
6.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
10 ns 25 ns
立ち上がり時間
10 ns 25 ns
Vgs-Gate-Source-Voltage
8 V
Id-連続-ドレイン-電流
4.5 A
Vds-ドレイン-ソース-ブレークダウン-電圧
12 V
Rds-On-Drain-Source-Resistance
24 mOhms 50 mOhms
トランジスタ-極性
NチャネルPチャネル
典型的なターンオフ遅延時間
22 ns 30 ns
典型的なターンオン遅延時間
10 ns 30 ns
チャネルモード
強化
Tags
SIA517DJ-T1-G, SIA517DJ-T1, SIA517DJ-T, SIA517, SIA51, SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor; 4.3 A; 4.5 A; 12V; 6-Pin SC-70
***et Europe
Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R
***Components
In a Pack of 20, Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) Vishay SIA517DJ-T1-GE3
***ure Electronics
N- AND P-CHANNEL 12-V (D-S) MOSFET
***i-Key
MOSFET N/P-CH 12V 4.5A SC-70-6
***
N-AND P-CHANNEL 20-V (D-S)
***ark
Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.024Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:6.5W Rohs Compliant: No
***ment14 APAC
Prices include import duty and tax. MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6.5W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET CAN N/P, 12V, 4.5A, POWERPAK SC70; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:12V; Resistenza di Attivazione Rds(on):0.024ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:6.5W; Modello Case Transistor:PowerPAK SC70; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
モデル メーカー 説明 ストック 価格
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.2387
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 15000
  • 3000:$0.2864
  • 6000:$0.2203
  • 9000:$0.1754
  • 15000:$0.1482
  • 30000:$0.1364
  • 75000:$0.1322
  • 150000:$0.1283
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA517DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.2099
  • 6000:$0.1979
  • 12000:$0.1969
  • 18000:$0.1969
  • 30000:$0.1959
SIA517DJ-T1-GE3
DISTI # SIA517DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.5819
  • 6000:€0.3969
  • 12000:€0.3419
  • 18000:€0.3159
  • 30000:€0.2939
SIA517DJ-T1-GE3
DISTI # 05W6926
Vishay IntertechnologiesMOSFET, NP CHANNEL, 12V, 4.5A, POWERPAK SC70,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
  • 1:$0.7500
  • 10:$0.6340
  • 25:$0.5810
  • 50:$0.5280
  • 100:$0.4750
  • 500:$0.3490
  • 1000:$0.2690
SIA517DJ-T1-GE3.
DISTI # 15AC0288
Vishay IntertechnologiesTransistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:6.5W , RoHS Compliant: No0
  • 1:$0.2170
  • 3000:$0.2100
  • 6000:$0.2030
SIA517DJ-T1-GE3
DISTI # 70616550
Vishay SiliconixSIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor,4.3 A,4.5 A,12V,6-Pin SC-70
RoHS: Compliant
0
  • 300:$0.5400
  • 600:$0.4800
  • 1500:$0.4200
  • 3000:$0.3800
SIA517DJ-T1-GE3
DISTI # 781-SIA517DJ-GE3
Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant
5505
  • 1:$0.6700
  • 10:$0.5060
  • 100:$0.3760
  • 500:$0.3090
  • 1000:$0.2390
  • 3000:$0.2170
  • 6000:$0.2030
SIA517DJ-T1-GE3
DISTI # 8141225P
Vishay IntertechnologiesTRANS MOSFET N/P-CH 12V 4.5A/4.3A, RL440
  • 200:£0.1960
SIA517DJ-T1-GE3
DISTI # 2889717
Vishay IntertechnologiesMOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70
RoHS: Compliant
0
  • 5:$1.2400
  • 25:$1.0200
  • 100:$0.8030
  • 250:$0.6600
  • 500:$0.5610
  • 1000:$0.5300
  • 5000:$0.5120
SIA517DJ-T1-GE3
DISTI # 2889717
Vishay IntertechnologiesMOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70
RoHS: Compliant
0
  • 5:£0.3710
  • 25:£0.3070
  • 100:£0.2750
  • 250:£0.2540
  • 500:£0.2370
SIA517DJ-T1-GE3Vishay IntertechnologiesMOSFET 12V Vds 8V Vgs PowerPAK SC-70
RoHS: Compliant
Americas - Stock
    画像 モデル 説明
    SIA517DJ-T1-GE3

    Mfr.#: SIA517DJ-T1-GE3

    OMO.#: OMO-SIA517DJ-T1-GE3

    MOSFET 12V Vds 8V Vgs PowerPAK SC-70
    SIA517DJ-T1-GE3-CUT TAPE

    Mfr.#: SIA517DJ-T1-GE3-CUT TAPE

    OMO.#: OMO-SIA517DJ-T1-GE3-CUT-TAPE-1190

    ブランドニューオリジナル
    SIA517DJ

    Mfr.#: SIA517DJ

    OMO.#: OMO-SIA517DJ-1190

    ブランドニューオリジナル
    SIA517DJ-T1-E3

    Mfr.#: SIA517DJ-T1-E3

    OMO.#: OMO-SIA517DJ-T1-E3-1190

    ブランドニューオリジナル
    SIA517DJ-T1-GE3

    Mfr.#: SIA517DJ-T1-GE3

    OMO.#: OMO-SIA517DJ-T1-GE3-VISHAY

    MOSFET N/P-CH 12V 4.5A SC-70-6
    SIA517DJ-T1-GE3(EEW)

    Mfr.#: SIA517DJ-T1-GE3(EEW)

    OMO.#: OMO-SIA517DJ-T1-GE3-EEW--1190

    ブランドニューオリジナル
    SIA517DJ-T4-GE3

    Mfr.#: SIA517DJ-T4-GE3

    OMO.#: OMO-SIA517DJ-T4-GE3-1190

    ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    1500
    数量を入力してください:
    SIA517DJ-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.16
    $0.16
    10
    $0.15
    $1.50
    100
    $0.14
    $14.21
    500
    $0.13
    $67.10
    1000
    $0.13
    $126.30
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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