SIA427DJ-T1-GE3

SIA427DJ-T1-GE3
Mfr. #:
SIA427DJ-T1-GE3
メーカー:
Vishay
説明:
MOSFET P-CH 8V 12A SC-70-6
ライフサイクル:
メーカー新製品
データシート:
SIA427DJ-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SIA427DJ-T1-GE3 詳しくは
製品属性
属性値
メーカー
VISHAY
製品カテゴリ
FET-シングル
シリーズ
SIA4xxDJ
包装
リール
パーツエイリアス
SIA427DJ-GE3
取り付けスタイル
SMD / SMT
パッケージ-ケース
PowerPAK-SC-70-6
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 P-Channel
Pd-電力損失
3.5 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
Vgs-Gate-Source-Voltage
5 V
Id-連続-ドレイン-電流
- 12 A
Vds-ドレイン-ソース-ブレークダウン-電圧
- 8 V
Rds-On-Drain-Source-Resistance
13 mOhms
トランジスタ-極性
Pチャネル
Qg-Gate-Charge
33 nC
フォワード-相互コンダクタンス-最小
37 S
Tags
SIA427D, SIA427, SIA42, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6
***ical
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
MOSFET, P CH, -8V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-1.2V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
SiA427DJ 8V TrenchFET® Power MOSFETs
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more. Learn MoreView entire Vishay Siliconix Power MOSFET line
モデル メーカー 説明 ストック 価格
SIA427DJ-T1-GE3
DISTI # V72:2272_09216832
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 25:$0.3422
  • 10:$0.3437
  • 1:$0.4261
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
24000In Stock
  • 3000:$0.2131
SIA427DJ-T1-GE3
DISTI # 30150538
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 37:$0.3422
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1809
  • 6000:$0.1759
  • 12000:$0.1689
  • 18000:$0.1639
  • 30000:$0.1599
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA427DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIA427DJ-T1-GE3
    DISTI # 69W7155
    Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:-1.2V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
      SIA427DJ-T1-GE3.
      DISTI # 30AC0109
      Vishay IntertechnologiesP-CHANNEL 8-V (D-S) MOSFET , ROHS COMPLIANT: NO0
      • 1:$0.2090
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK SC-70-6
      RoHS: Compliant
      3000Reel
      • 3000:$0.1720
      SIA427DJ-T1-GE3
      DISTI # 781-SIA427DJ-T1-GE3
      Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant
      197
      • 1:$0.6000
      • 10:$0.4520
      • 100:$0.3360
      • 500:$0.2760
      • 1000:$0.2130
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay Siliconix12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET576
      • 251:$0.1680
      • 57:$0.2400
      • 1:$0.4800
      SIA427DJ-T1-GE3Vishay Semiconductors12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET9
      • 1:$0.4800
      SIA427DJ-T1-GE3
      DISTI # 2459389
      Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK S
      RoHS: Compliant
      0
      • 1:$0.9500
      • 10:$0.7160
      • 100:$0.5320
      • 500:$0.4370
      • 1000:$0.3380
      • 3000:$0.3310
      SIA427DJ-T1-GE3Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant
      Americas -
      • 3000:$0.1700
      • 6000:$0.1610
      • 12000:$0.1560
      • 24000:$0.1530
      SIA427DJ-T1-GE3
      DISTI # C1S803601298676
      Vishay IntertechnologiesMOSFETs2877
      • 250:$0.2658
      • 100:$0.2747
      • 25:$0.3407
      • 10:$0.3422
      画像 モデル 説明
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3

      MOSFET 8V 12A 19W 13mohms @ 4.5V
      SIA427DJ-T1-GE3-CUT TAPE

      Mfr.#: SIA427DJ-T1-GE3-CUT TAPE

      OMO.#: OMO-SIA427DJ-T1-GE3-CUT-TAPE-1190

      ブランドニューオリジナル
      SIA427DJ

      Mfr.#: SIA427DJ

      OMO.#: OMO-SIA427DJ-1190

      ブランドニューオリジナル
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3-VISHAY

      MOSFET P-CH 8V 12A SC-70-6
      可用性
      ストック:
      Available
      注文中:
      3500
      数量を入力してください:
      SIA427DJ-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.23
      $0.23
      10
      $0.22
      $2.17
      100
      $0.21
      $20.52
      500
      $0.19
      $96.90
      1000
      $0.18
      $182.40
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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