NTMD6601NR2G

Mfr. #:: NTMD6601NR2G
メーカー:: ON Semiconductor
説明:: MOSFET 2N-CH 80V 1.1A 8SOIC
ライフサイクル:: メーカー新製品
データシート:: NTMD6601NR2G データシート
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HTML Datasheet:: NTMD6601NR2G Datasheet NTMD6601NR2G Datasheet (P4-P6)
ECAD Model:

製品属性
属性値

Tags: NTMD6, NTMD, NTM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTMD6601NR2G 説明

***et: Transistor MOSFET Array Dual N-CH 80V 1.4A 8-Pin SOIC T/R

***emi: Power MOSFET 80V 1.4A 245 mOhm Dual N-Channel SO-8

***ponent Stockers USA: 1100 mA 80 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET

***el Electronic: MOSFET NFET S08D 80V 1.4A 245mOHM

***r Electronics: Small Signal Field-Effect Transistor, 1.1A I(D), 80V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2N-CH 80V 8-SOIC

***ser: MOSFETs .3a, 80V, 0.222 Ohm Dual N-Channel

***i-Key Marketplace: SMALL SIGNAL N-CHANNEL MOSFET

***ure Electronics: Quad N/P-Channel 60 V 0.35/0.60 Ohm 3.2/5.1 nC 0.87 mW Silicon Mosfet SOIC-8

***des Inc SCT: 60V SO8 Complementary enhancement mode MOSFET H-Bridge, 0.87 W, RoHS

***(Formerly Allied Electronics): MOSFET Dual N/P-Ch 60V 1.8A/1.42A SOIC8

***ical: Trans MOSFET N/P-CH 60V 1.39A/1.28A 8-Pin SO T/R

***ark: Mosfet, P/n-Ch, 60V, 1.39A Rohs Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 2A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET

***emi: Complementary Dual Power MOSFET, 100V, 2A

***et: Trans MOSFET N/P-CH 100V/-100V 2A/-2A 8-Pin SOT-96 T/R

***nell: MOSFET, DUAL N & P-CH, 100V, 2A, SOIC; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Volt

***ark: Mosfet, Dual N & P-Ch, 100V, 2A/150Deg C; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:100V; Drain Source Voltage Vds P Channel:100V; Continuous Drain Current Id N Channel:2A; No. Of Pins:8Pins Rohs Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 100V 2.1A 8-Pin SOIC T/R

*** Source Electronics: Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R / MOSFET 2N-CH 100V 1.6A 8-SOIC

***ure Electronics: ZXMN10A08 Series 100 V 0.25 Ohm N-Channel Enhancement Mode MOSFET -SOIC-8

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/N Variants: Enhancement mode Power dissipation: 1.8 W

***i-Key: MOSFET 2N-CH 100V 1.3A 8SOIC

***ter Electronics: 100V/20V, 480/530MO, NCH, DUAL, SO8, 600A GOX, PTI

***rchild Semiconductor: These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***icroelectronics: N-Channel 60V - 0.045 Ohm - 4A - SO-8 STripFET(TM) II POWER MOSFET

***et Europe: Transistor MOSFET Array Dual N-CH 60V 4A 8-Pin SOIC T/R

***ure Electronics: N-Channel 60 V 0.055 O 15 nC Surface Mount STripFET Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET Dual N-Ch 60V 4A STripFET SOIC8

Market price

モデル	メーカー	説明	ストック	価格
NTMD6601NR2G DISTI # NTMD6601NR2G-ND	ON Semiconductor	MOSFET 2N-CH 80V 1.1A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NTMD6601NR2G DISTI # NTMD6601NR2G	ON Semiconductor	Trans MOSFET N-CH 80V 2.2A 8-Pin SOIC N T/R - Bulk (Alt: NTMD6601NR2G) RoHS: Compliant Min Qty: 625 Container: Bulk	Americas - 0	6250:$0.4929 3125:$0.5059 1875:$0.5119 1250:$0.5189 625:$0.5219
NTMD6601NR2G DISTI # 863-NTMD6601NR2G	ON Semiconductor	MOSFET NFET S08D 80V 1.4A 245mOHM RoHS: Compliant	0
NTMD6601NR2G	ON Semiconductor	Small Signal Field-Effect Transistor, 1.1A I(D), 80V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	61711	1000:$0.5300 500:$0.5500 100:$0.5800 25:$0.6000 1:$0.6500

NTMD6601NR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes