IGW50N65F5FKSA1

Mfr. #:: IGW50N65F5FKSA1
メーカー:: Infineon Technologies
説明:: IGBT Transistors IGBT PRODUCTS
ライフサイクル:: メーカー新製品
データシート:: IGW50N65F5FKSA1 データシート
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詳しくは:: IGW50N65F5FKSA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: IGBT-シングル

シリーズ: TrenchStopR

包装: チューブ

パーツエイリアス: IGW50N65F5 SP000973426

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

入力方式: 標準

取付タイプ: スルーホール

サプライヤー-デバイス-パッケージ: PG-TO247-3

構成: 独身

パワーマックス: 305W

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 80A

電圧-コレクタ-エミッタ-故障-最大: 650V

IGBTタイプ: -

Current-Collector-Pulsed-Icm: 150A

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 50A

スイッチング-エネルギー: 490μJ (on), 160μJ (off)

ゲートチャージ: 120nC

Td-on-off-25°C: 21ns/175ns

テスト条件: 400V, 25A, 12 Ohm, 15V

Pd-電力損失: 305 W

最高作動温度: + 175 C

最低作動温度: - 40 C

コレクター-エミッター-電圧-VCEO-マックス: 650 V

コレクター-エミッター-飽和-電圧: 1.6 V

連続-コレクター-電流-at-25-C: 80 A

ゲート-エミッタ-リーク-電流: 100 nA

最大ゲート-エミッタ-電圧: 20 V

連続-コレクタ-電流-Ic-Max: 56 A

Tags: IGW50N65F, IGW50N65, IGW50N, IGW5, IGW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW50N65F5FKSA1 説明

***Components: In a Tube of 30, Infineon IGW50N65F5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247

***p One Stop Global: Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube

***ical: Trans IGBT Chip N-CH 650V 80A

***i-Key: IGBT 650V 80A 305W PG-TO247-3

***ronik: IGBT 650V 50A 1.6V TO247-3

***ark: IGBT, 650V, 50A, TO247-3

***ukat: 650V 80A 305W TO247

***ment14 APAC: Prices include import duty and tax. IGBT, 650V, 50A, TO247-3; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT

***nell: IGBT, 650V, 50A, TO247-3; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:305W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IGW50N65F5FKSA1 詳しくは

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

モデル	メーカー	説明	ストック	価格
IGW50N65F5FKSA1 DISTI # V99:2348_06378872	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	5	100:$2.3350 10:$2.7260 1:$3.1920
IGW50N65F5FKSA1 DISTI # IGW50N65F5FKSA1-ND	Infineon Technologies AG	IGBT 650V 80A 305W PG-TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	30In Stock	1200:$2.6891 720:$3.1885 240:$3.7455 10:$4.5710 1:$5.0900
IGW50N65F5FKSA1 DISTI # 32700397	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	480	5:$2.1655
IGW50N65F5FKSA1 DISTI # 26986810	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	5	100:$2.3350 10:$2.7260 3:$3.1920
IGW50N65F5FKSA1 DISTI # SP000973426	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973426) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 480	1:€2.5900 10:€2.2900 25:€2.1900 50:€2.1900 100:€2.0900 500:€1.9900 1000:€1.8900
IGW50N65F5FKSA1 DISTI # IGW50N65F5FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65F5FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	240:$2.5900 480:$2.4900 960:$2.3900 1440:$2.2900 2400:$2.2900
IGW50N65F5 DISTI # 726-IGW50N65F5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	216	1:$4.8400 10:$4.1100 100:$3.5600 250:$3.3800 500:$3.0300
IGW50N65F5FKSA1 DISTI # 726-IGW50N65F5FKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	0	1:$4.8400 10:$4.1100 100:$3.5600 250:$3.3800 500:$3.0300
IGW50N65F5FKSA1 DISTI # 1107426P	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU	3068	400:£1.8450 200:£1.8900 80:£1.9400 20:£2.0930
IGW50N65F5FKSA1 DISTI # IGW50N65F5	Infineon Technologies AG	650V 80A 305W TO247 RoHS: Compliant	230	1:€5.9500 10:€2.9500 50:€1.9500 100:€1.8800
IGW50N65F5FKSA1 DISTI # 2363279	Infineon Technologies AG	IGBT, 650V, 50A, TO247-3 RoHS: Compliant	88	500:£1.5700 250:£1.7400 100:£1.8400 10:£2.1200 1:£2.8100
IGW50N65F5FKSA1 DISTI # XSKDRABS0030187	Infineon Technologies AG	RoHS: Compliant	720 in Stock0 on Order	720:$3.2400 240:$3.4800

画像	モデル	説明
	Mfr.#: IGW50N60T OMO.#: OMO-IGW50N60T	IGBT Transistors LOW LOSS IGBT TECH 600V 50A
	Mfr.#: IGW50N65H5AXKSA1 OMO.#: OMO-IGW50N65H5AXKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IGW50N60 G50N60 OMO.#: OMO-IGW50N60-G50N60-1190	ブランドニューオリジナル
	Mfr.#: IGW50N60H3 , 2SC5183 OMO.#: OMO-IGW50N60H3-2SC5183-1190	ブランドニューオリジナル
	Mfr.#: IGW50N60H3S OMO.#: OMO-IGW50N60H3S-1190	ブランドニューオリジナル
	Mfr.#: IGW50N60N OMO.#: OMO-IGW50N60N-1190	ブランドニューオリジナル
	Mfr.#: IGW50N65H5,G50H655 OMO.#: OMO-IGW50N65H5-G50H655-1190	ブランドニューオリジナル
	Mfr.#: IGW50N65H5/F5 OMO.#: OMO-IGW50N65H5-F5-1190	ブランドニューオリジナル
	Mfr.#: IGW50N65H5AXKSA1 OMO.#: OMO-IGW50N65H5AXKSA1-INFINEON-TECHNOLOGIES	IGBT 650V TO247-3
	Mfr.#: IGW50N60H3 OMO.#: OMO-IGW50N60H3-126	IGBT Transistors 600V 50A 333W

IGW50N65F5FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes