FQE10N20CTU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-126-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

360 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

12.8 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

11 mm

Length:

8 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

3.25 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

4.5 S

Fall Time:

72 ns

Product Type:

MOSFET

Rise Time:

92 ns

Factory Pack Quantity:

60

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

70 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

FQE10N20CTU_NL

Unit Weight:

0.014110 oz

Tags

FQE