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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SIHF12N60E-GE3 DISTI # V72:2272_09218848 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | 1000 |
|
| SIHF12N60E-GE3 DISTI # V99:2348_09218848 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | 0 |
|
| SIHF12N60E-GE3 DISTI # SIHF12N60E-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 600V 12A TO220 FULLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 958In Stock |
|
| SIHF12N60E-GE3 DISTI # SIHF12N60E-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 600V 12A TO220 FULLP RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SIHF12N60E-GE3 DISTI # 25790517 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP | 1000 |
|
| SIHF12N60E-GE3 DISTI # SIHF12N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin TO-220FP (Alt: SIHF12N60E-GE3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| SIHF12N60E-GE3 DISTI # SIHF12N60E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF12N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| SIHF12N60E-GE3 DISTI # 19X1934 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 12 A, 600 V, 0.32 ohm, 10 V, 2 V RoHS Compliant: Yes | 483 |
|
| SIHF12N60E-E3 DISTI # 781-SIHF12N60E-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | 790 |
|
| SIHF12N60E-GE3 DISTI # 78-SIHF12N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | 825 |
|
| SIHF12N60EGE3 | Vishay Siliconix | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 500 | |
| SIHF12N60E-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | Americas - | |
| SIHF12N60E-E3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | Americas - | |
| SIHF12N60E-GE3 DISTI # 2364076 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 12A, TO-220FP RoHS: Compliant | 483 |
|
| SIHF12N60E-GE3 DISTI # 2364076 | Vishay Intertechnologies | MOSFET, N-CH, 600V, 12A, TO-220FP | 497 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SIHF12N50C-E3 OMO.#: OMO-SIHF12N50C-E3 |
MOSFET N-Channel 500V |
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Mfr.#: SIHF12N65E-GE3 OMO.#: OMO-SIHF12N65E-GE3 |
MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
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Mfr.#: SIHF12N60E-GE3 OMO.#: OMO-SIHF12N60E-GE3 |
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK |
|
Mfr.#: SIHF12N60E-GE3 OMO.#: OMO-SIHF12N60E-GE3-VISHAY |
IGBT Transistors MOSFET 600V 380mOhms@10V 12A N-Ch E-SRS |
|
Mfr.#: SIHF12N65E-GE3 OMO.#: OMO-SIHF12N65E-GE3-VISHAY |
IGBT Transistors MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS |
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Mfr.#: SIHF12N50C-E3 OMO.#: OMO-SIHF12N50C-E3-VISHAY |
RF Bipolar Transistors MOSFET N-Channel 500V |
|
Mfr.#: SIHF122N50C-E3 OMO.#: OMO-SIHF122N50C-E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SIHF12N60E OMO.#: OMO-SIHF12N60E-1190 |
ブランドニューオリジナル |
|
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Mfr.#: SIHF12N60EGE3 OMO.#: OMO-SIHF12N60EGE3-1190 |
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
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Mfr.#: SIHF12N65E OMO.#: OMO-SIHF12N65E-1190 |
ブランドニューオリジナル |