BSR606NH6327XTSA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PG-SC-59-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

2.3 A

Rds On - Drain-Source Resistance:

60 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

3.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Series:

BSR606

Transistor Type:

1 N-Channel

Width:

1.3 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

5.4 S

Fall Time:

2.1 ns

Product Type:

MOSFET

Rise Time:

2.6 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

13 ns

Typical Turn-On Delay Time:

5.6 ns

Part # Aliases:

BSR606N H6327 SP000691160

Unit Weight:

0.000282 oz

Tags

BSR606NH, BSR606, BSR60, BSR6, BSR