SI4346DY-T1-E3

Mfr. #:: SI4346DY-T1-E3
メーカー:: Vishay
説明:: MOSFET N-CH 30V 5.9A 8-SOIC
ライフサイクル:: メーカー新製品
データシート:: SI4346DY-T1-E3 データシート
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HTML Datasheet:: SI4346DY-T1-E3 Datasheet SI4346DY-T1-E3 Datasheet (P4-P6)SI4346DY-T1-E3 Datasheet (P7-P8)
ECAD Model:

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI4346DY-E3

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 1.31W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 5.9A (Ta)

Rds-On-Max-Id-Vgs: 23 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2V @ 250μA

ゲートチャージ-Qg-Vgs: 10nC @ 4.5V

Pd-電力損失: 1.31 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 11 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 5.9 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 23 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 40 ns

典型的なターンオン遅延時間: 9 ns

チャネルモード: 強化

Tags: SI4346D, SI4346, SI434, SI43, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4346DY-T1-E3 説明

***ure Electronics: Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No

Market price

モデル	メーカー	説明	ストック	価格
SI4346DY-T1-E3 DISTI # V72:2272_09216464	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	75000:$0.3116 30000:$0.3146 15000:$0.3175 6000:$0.3205 3000:$0.3234 1000:$0.3264 500:$0.3585 250:$0.3923 100:$0.4267 50:$0.4351 25:$0.4834 10:$0.4928 1:$0.5231
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4346DY-T1-E3 DISTI # 25790090	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	15000:$0.3413 6000:$0.3445 3000:$0.3477 1000:$0.3509 500:$0.3854 250:$0.4217 100:$0.4587 50:$0.4677 25:$0.5197 19:$0.5298
SI4346DY-T1-E3 DISTI # 19257946	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	995	167:$0.3750
SI4346DY-T1-E3 DISTI # 57J5650	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes	995	1:$0.3000 10:$0.3000 25:$0.3000 50:$0.3000 100:$0.3000 250:$0.3000 500:$0.3000
SI4346DY-T1-E3. DISTI # 30AC0153	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W,No. of Pins:8Pins RoHS Compliant: No	0
SI4346DY-T1-E3 DISTI # 70026210	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant	0	2500:$0.4400 5000:$0.4200 7500:$0.3900
SI4346DY-T1-E3 DISTI # 781-SI4346DY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 RoHS: Compliant	0
SI4346DY-T1-E3	Vishay Siliconix	MOSFET Transistor, N-Channel, SO	20	1:$1.7500
SI4346DY-T1-E3	---		7
SI4346DY-T1-E3	Vishay Intertechnologies		6969
SI4346DYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4346DY-T1-E3			281
SI4346DY-T1-E3 DISTI # 1839003	Vishay Intertechnologies	MOSFET,N CH,30V,5.9A,8-SOIC RoHS: Compliant	995	1000:£0.3290 500:£0.3360 100:£0.3430 50:£0.4530 5:£0.5100

画像	モデル	説明
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
	Mfr.#: SI4346DY-T1 OMO.#: OMO-SI4346DY-T1-1190	ブランドニューオリジナル
	Mfr.#: SI4346DY-T1-E3 OMO.#: OMO-SI4346DY-T1-E3-VISHAY	MOSFET N-CH 30V 5.9A 8-SOIC

SI4346DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes