RS3E135BNGZETB

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOP-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

13.5 A

Rds On - Drain-Source Resistance:

5.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

33 nC

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

9.5 S

Fall Time:

30 ns

Product Type:

MOSFET

Rise Time:

17 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

69 ns

Typical Turn-On Delay Time:

10 ns

Part # Aliases:

RS3E135BN

Tags

RS3E1, RS3E, RS3