NDD60N745U1-35G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

IPAK-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

6.6 A

Rds On - Drain-Source Resistance:

610 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

15 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

84 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Forward Transconductance - Min:

5.6 S

Fall Time:

7 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

10 ns

Factory Pack Quantity:

75

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

19 ns

Typical Turn-On Delay Time:

8 ns

Unit Weight:

0.139332 oz

Tags

NDD60N7, NDD60N, NDD6, NDD