VMMK-1218-TR1G

Product Attribute

Attribute Value

Manufacturer:

Broadcom Limited

Product Category:

RF JFET Transistors

RoHS:

Y

Transistor Type:

EpHEMT

Technology:

GaAs

Gain:

9 dB

Vds - Drain-Source Breakdown Voltage:

5 V

Vgs - Gate-Source Breakdown Voltage:

- 5 V to 1 V

Id - Continuous Drain Current:

100 mA

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 mW

Mounting Style:

SMD/SMT

Packaging:

Reel

Configuration:

Single

Operating Frequency:

10 GHz

Product:

RF JFET

Type:

GaAs EpHEMT

Brand:

Broadcom / Avago

Forward Transconductance - Min:

200 mS

NF - Noise Figure:

0.81 dB

P1dB - Compression Point:

12 dBm

Product Type:

RF JFET Transistors

Factory Pack Quantity:

5000

Subcategory:

Transistors

Tags

VMMK-121, VMMK-1, VMMK, VMM