IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
Mfr. #:
IGOT60R070D1AUMA1
メーカー:
Infineon Technologies
説明:
MOSFET 600V CoolGaN Power Transistor
ライフサイクル:
メーカー新製品
データシート:
IGOT60R070D1AUMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IGOT60R070D1AUMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
GaN
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
PG-DSO-20
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
31 A
Rds On-ドレイン-ソース抵抗:
70 mOhms
Vgs th-ゲート-ソースしきい値電圧:
0.9 V
Vgs-ゲート-ソース間電圧:
10 V
Qg-ゲートチャージ:
5.8 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
125 W
チャネルモード:
強化
商標名:
CoolGaN
包装:
リール
トランジスタタイプ:
1 N-Channel
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
13 ns
製品タイプ:
MOSFET
立ち上がり時間:
9 ns
ファクトリーパックの数量:
800
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
15 ns
典型的なターンオン遅延時間:
15 ns
パーツ番号エイリアス:
SP001505772
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
モデル メーカー 説明 ストック 価格
IGOT60R070D1AUMA1
DISTI # V72:2272_22710691
Infineon Technologies AGIGOT60R070D1AUMA1293
  • 75000:$15.6200
  • 30000:$15.7200
  • 15000:$15.8200
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1CT-ND
Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1DKR-ND
Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
647In Stock
  • 100:$19.3136
  • 10:$22.6170
  • 1:$24.5200
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1TR-ND
Infineon Technologies AGIC GAN FET 600V 60A 20DSO
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$17.0240
IGOT60R070D1AUMA1
DISTI # 32907523
Infineon Technologies AGIGOT60R070D1AUMA1293
  • 6000:$15.9100
  • 3000:$16.0100
  • 1000:$16.1000
  • 500:$16.2000
  • 250:$17.0100
  • 100:$17.1200
  • 50:$17.9300
  • 25:$19.9200
  • 10:$20.8500
  • 1:$22.5900
IGOT60R070D1AUMA1
DISTI # IGOT60R070D1AUMA1
Infineon Technologies AGTrans MOSFET N-CH 600V 60A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGOT60R070D1AUMA1)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 8000:$14.8900
  • 4800:$15.0900
  • 3200:$15.6900
  • 1600:$16.2900
  • 800:$16.8900
IGOT60R070D1AUMA1
DISTI # 84AC1769
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes87
  • 500:$16.3800
  • 250:$17.2100
  • 100:$18.0400
  • 50:$19.1100
  • 25:$20.1800
  • 10:$21.1300
  • 1:$22.9100
IGOT60R070D1AUMA1
DISTI # 726-IGOT60R070D1AUMA
Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant
468
  • 1:$22.6800
  • 5:$22.4400
  • 10:$20.9200
  • 25:$19.9800
  • 100:$17.8600
  • 250:$17.0400
  • 500:$16.2200
  • 800:$14.1000
IGOT60R070D1AUMA1
DISTI # 2981533
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W87
  • 100:£13.0800
  • 50:£13.8600
  • 10:£14.6300
  • 5:£16.4300
  • 1:£16.6000
IGOT60R070D1AUMA1
DISTI # 2981533
Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
RoHS: Compliant
87
  • 800:$22.9000
  • 500:$26.0500
  • 100:$26.9300
  • 50:$29.3700
  • 1:$32.3000
  • 10:$32.3000
画像 モデル 説明
1N4148

Mfr.#: 1N4148

OMO.#: OMO-1N4148

Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1

MOSFET 600V CoolGaN Power Transistor
IGT60R190D1SATMA1

Mfr.#: IGT60R190D1SATMA1

OMO.#: OMO-IGT60R190D1SATMA1

MOSFET 600V CoolGaN Power Transistor
IGO60R070D1AUMA1

Mfr.#: IGO60R070D1AUMA1

OMO.#: OMO-IGO60R070D1AUMA1

MOSFET 600V CoolGaN Power Transistor
IGLD60R070D1AUMA1

Mfr.#: IGLD60R070D1AUMA1

OMO.#: OMO-IGLD60R070D1AUMA1

MOSFET 600V CoolGaN Power Transistor
PGA26E19BA

Mfr.#: PGA26E19BA

OMO.#: OMO-PGA26E19BA

MOSFET MOSFET 600VDC 190mohm X-GaN
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
ACPL-P346-000E

Mfr.#: ACPL-P346-000E

OMO.#: OMO-ACPL-P346-000E

Logic Output Optocouplers OPTOCOUPLER GATE DRV, LF
1EDF5673FXUMA1

Mfr.#: 1EDF5673FXUMA1

OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

IC DRIVER IC GAN DSO-16-11
1EDS5663HXUMA1

Mfr.#: 1EDS5663HXUMA1

OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

IC DRIVER IC GAN DSO-16
可用性
ストック:
464
注文中:
2447
数量を入力してください:
IGOT60R070D1AUMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$22.68
$22.68
5
$22.44
$112.20
10
$20.92
$209.20
25
$19.98
$499.50
100
$17.86
$1 786.00
250
$17.04
$4 260.00
500
$16.22
$8 110.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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