IXTA3N120HV-TRL

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

1.2 kV

Id - Continuous Drain Current:

3 A

Rds On - Drain-Source Resistance:

4.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

42 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

200 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 P-Channel

Brand:

IXYS

Fall Time:

18 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

17 ns

Tags

IXTA3N12, IXTA3N1, IXTA3N, IXTA3, IXTA, IXT