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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI4427BDY-T1-GE3 DISTI # V72:2272_09216487 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant | 4882 |
|
| SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 30V 9.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4985In Stock |
|
| SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 30V 9.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4985In Stock |
|
| SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 30V 9.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4427BDY-T1-GE3 DISTI # 27510656 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant | 4882 |
|
| SI4427BDY-T1-GE3 DISTI # SI4427BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4427BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4427BDY-T1-GE3 DISTI # 15R5013 | Vishay Intertechnologies | P CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-12.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-2.5V,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4427BDY-T1-GE3 DISTI # 26R1876 | Vishay Intertechnologies | P CHANNEL MOSFET, -30V, 12.6A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes | 0 |
|
| SI4427BDY-T1-GE3 DISTI # 781-SI4427BDY-GE3 | Vishay Intertechnologies | MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V RoHS: Compliant | 1466 |
|
| SI4427BDY-T1-GE3. DISTI # 2118917 | Vishay Intertechnologies | P CHANNEL MOSFET, -30V, 12.6A, SOIC RoHS: Compliant | 0 |
|
| SI4427BDY-T1-GE3 DISTI # C1S803601998828 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R RoHS: Compliant | 4882 |
|
| SI4427BDY-T1-GE3.. DISTI # 8156751 | Vishay Intertechnologies | RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI4427BDY-T1-E3 OMO.#: OMO-SI4427BDY-T1-E3 |
MOSFET 30V 13.3A 3W |
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Mfr.#: SI4427BDY-T1-GE3 OMO.#: OMO-SI4427BDY-T1-GE3 |
MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V |
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Mfr.#: SI4427BDY-T1-GE3 OMO.#: OMO-SI4427BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V |
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Mfr.#: SI4427BDY-T1-E3-CUT TAPE |
ブランドニューオリジナル |
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Mfr.#: SI4427BDY OMO.#: OMO-SI4427BDY-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4427BDY-T1-E3 OMO.#: OMO-SI4427BDY-T1-E3-VISHAY |
MOSFET P-CH 30V 9.7A 8-SOIC |