SIA465EDJ-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-SC70-6

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

12 A

Rds On - Drain-Source Resistance:

13.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

500 mV

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

72 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

19 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Series:

SIA

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

29 S

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

6000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

25 ns

Tags

SIA46, SIA4, SIA