SQD90P04_9M4LT4GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

90 A

Rds On - Drain-Source Resistance:

9.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

- 2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

155 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

136 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

TrenchFET

Series:

SQ

Transistor Type:

1 P-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

46 S

Fall Time:

19 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

61 ns

Typical Turn-On Delay Time:

13 ns

Tags

SQD90, SQD9, SQD