BSZ039N06NSATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

TSDSON-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

40 A

Rds On - Drain-Source Resistance:

3.9 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

34 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

69 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

BSZ039N06

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

27 S

Fall Time:

6 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

19 ns

Typical Turn-On Delay Time:

10 ns

Part # Aliases:

BSZ039N06NS SP002035226

Tags

BSZ03, BSZ0, BSZ