QS8J1TR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSMT-8

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

4.5 A

Rds On - Drain-Source Resistance:

29 mOhms

Vgs - Gate-Source Voltage:

10 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.5 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Length:

3 mm

Product:

MOSFET Small Signal

Series:

QS8J1

Transistor Type:

2 P-Channel

Width:

2.4 mm

Brand:

ROHM Semiconductor

Fall Time:

215 ns

Product Type:

MOSFET

Rise Time:

75 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

390 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

QS8J1

Tags

QS8J1, QS8J, QS8