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| PartNumber | QS8J11TCR | QS8J1 | QS8J11CR |
| Description | MOSFET Dual P-Channel MOSFET Transistor | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSMT-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 31 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | QS8J11 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 170 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | QS8J11 | - | - |