NESG2030M04-T2-A

Product Attribute

Attribute Value

Manufacturer:

CEL

Product Category:

RF Bipolar Transistors

RoHS:

Y

Transistor Type:

Bipolar

Technology:

SiGe

Transistor Polarity:

NPN

Emitter- Base Voltage VEBO:

1.2 V

Continuous Collector Current:

0.035 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Configuration:

Single

Mounting Style:

SMD/SMT

Package / Case:

SOT-343

Packaging:

Reel

Collector- Base Voltage VCBO:

8 V

DC Current Gain hFE Max:

200 at 5 mA at 2 V

Operating Frequency:

60000 MHz

Type:

RF Silicon Germanium

Brand:

CEL

Pd - Power Dissipation:

80 mW

Product Type:

RF Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Tags

NESG2030M04-T, NESG2030, NESG203, NESG20, NESG2, NESG, NES