DGTD65T40S2PT

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

IGBT Transistors

Technology:

Si

Package / Case:

TO-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

650 V

Collector-Emitter Saturation Voltage:

1.8 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

80 A

Pd - Power Dissipation:

230 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 175 C

Packaging:

Tube

Continuous Collector Current Ic Max:

80 A

Brand:

Diodes Incorporated

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

450

Subcategory:

IGBTs

Tags

DGTD6, DGTD, DGT