D3S190N65B-U

Product Attribute

Attribute Value

Manufacturer:

D3 Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

18.5 A

Rds On - Drain-Source Resistance:

180 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

32.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

146 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

D3

Fall Time:

33 ns

Product Type:

MOSFET

Rise Time:

30 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

51 ns

Typical Turn-On Delay Time:

21 ns

Unit Weight:

0.063493 oz

Tags

D3S19, D3S1, D3S