MR4A08BYS35R

Mfr. #:: MR4A08BYS35R
メーカー:: Everspin Technologies
説明:: NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
ライフサイクル:: メーカー新製品
データシート:: MR4A08BYS35R データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: MR4A08BYS35R 詳しくは

製品属性
属性値

メーカー: Everspin Technologies Inc.

製品カテゴリ: メモリー

シリーズ: MR4A08B

包装: テープ＆リール（TR）代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: TSOP-44

作動温度: 0°C ~ 70°C (TA)

インターフェース: 平行

電圧供給: 3 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 44-TSOP2 (10.2x18.4)

メモリー容量: 16M (2M x 8)

メモリタイプ: MRAM（磁気抵抗RAM）

スピード: 35ns

アクセス時間: 35 ns

フォーマット-メモリ: 羊

最高作動温度: + 70 C

最低作動温度: 0 C

動作-供給-電流: 100 mA

インターフェイスタイプ: 平行

組織: 2 M x 8

データバス幅: 8 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 3 V

Tags: MR4A0, MR4A, MR4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR4A08BYS35R 評価とレビュー

I***o

2019-04-11

R***y

I haven't checked it yet.

2019-06-20

N***S

Received in perfect working condition

2019-07-14

MR4A08BYS35R 説明

***i-Key: IC RAM 16M PARALLEL 44TSOP2

MR4A08BYS35R 詳しくは

MR4A08B / MR4A16B 16Mb Parallel MRAMs: Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

モデル	メーカー	説明	ストック	価格
MR4A08BYS35R DISTI # MR4A08BYS35R-ND	Everspin Technologies	IC RAM 16M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$21.2268
MR4A08BYS35 DISTI # 936-MR4A08BYS35	Everspin Technologies	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM RoHS: Compliant	264	1:$27.7600 5:$26.9400 10:$25.8500 25:$25.5600 50:$24.9300 100:$21.8900 250:$21.1500
MR4A08BYS35R DISTI # 936-MR4A08BYS35R	Everspin Technologies	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM RoHS: Compliant	0	1500:$21.2300

関連製品

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	Mfr.#: MR4A08BCYS35 OMO.#: OMO-MR4A08BCYS35	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BYS35 OMO.#: OMO-MR4A08BYS35	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BMA35R OMO.#: OMO-MR4A08BMA35R	NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BUYS45R OMO.#: OMO-MR4A08BUYS45R	NVRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BYS35R OMO.#: OMO-MR4A08BYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BCMA35 OMO.#: OMO-MR4A08BCMA35-EVERSPIN-TECHNOLOGIES	IC RAM 16M PARALLEL 48FBGA
	Mfr.#: MR4A08BYS35 OMO.#: OMO-MR4A08BYS35-EVERSPIN-TECHNOLOGIES	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BMA35R OMO.#: OMO-MR4A08BMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 16M PARALLEL 48FBGA
	Mfr.#: MR4A08BMYS35 OMO.#: OMO-MR4A08BMYS35-1190	ブランドニューオリジナル