ZXTD09N50DE6TC

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-6

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

50 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

160 mV

Maximum DC Collector Current:

1 A

Gain Bandwidth Product fT:

215 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

200 at 10 mA, 2 V

Height:

1.3 mm

Length:

3.1 mm

Packaging:

Reel

Width:

1.8 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

1 A

DC Collector/Base Gain hfe Min:

200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 200 at 500 mA, 2 V, 75 at 1 A, 2 V, 20 at 1.5 A, 2 V

Pd - Power Dissipation:

900 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

10000

Subcategory:

Transistors

Unit Weight:

0.000229 oz

Tags

ZXTD09N50DE6T, ZXTD09N50D, ZXTD09N, ZXTD0, ZXTD, ZXT