IRFH7911TRPBF

Mfr. #:: IRFH7911TRPBF
メーカー:: Infineon Technologies
説明:: MOSFET 2N-CH 30V 13A/28A PQFN
ライフサイクル:: メーカー新製品
データシート:: IRFH7911TRPBF データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-アレイ

シリーズ: HEXFETR

包装: テープ＆リール（TR）

取り付けスタイル: SMD / SMT

パッケージ-ケース: 18-PowerVQFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PQFN (5x6)

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 2.4W, 3.4W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 1060pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 13A, 28A

Rds-On-Max-Id-Vgs: 8.6 mOhm @ 12A, 10V

Vgs-th-Max-Id: 2.35V @ 25μA

ゲートチャージ-Qg-Vgs: 12nC @ 4.5V

Pd-電力損失: 2.4 W 3.4 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 5.9 ns 14 ns

立ち上がり時間: 15 ns 35 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 13 A 28 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.35 V

Rds-On-Drain-Source-Resistance: 8.6 mOhms 3 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 12 ns 28 ns

典型的なターンオン遅延時間: 12 ns 22 ns

Qg-Gate-Charge: 8.3 nC 34 nC

フォワード-相互コンダクタンス-最小: 17 S 106 S

Tags: IRFH791, IRFH79, IRFH7, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH7911TRPBF 説明

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package

***ure Electronics: Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ical: Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R

***ied Electronics & Automation: MOSFET, DUAL N-CHANNEL, 30V, POL, PQFN5X6

*** Source Electronics: MOSFET 2N-CH 30V 13A/28A PQFN

***i-Key: MOSFET N-CH 30V DUAL PQFN

***ark: DUAL N CH MOSFET, 30V, PQFN-18; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.9 mm); Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2

***nell: MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Transistor Case Style:QFN; No. of Pins:18; SVHC:No SVHC (15-Dec-2010); Operating Temperature Range:-55°C to +150°C

***ment14 APAC: MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:18; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W

Market price

モデル	メーカー	説明	ストック	価格
IRFH7911TRPBF DISTI # V72:2272_13889764	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R RoHS: Compliant	375	250:$1.4135 100:$1.4288 25:$1.7130 10:$1.7326 1:$1.9747
IRFH7911TRPBF DISTI # IRFH7911TRPBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 13A/28A PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call	4000:$1.2511
IRFH7911TRPBF DISTI # 27502137	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R RoHS: Compliant	4000	4000:$1.0368
IRFH7911TRPBF DISTI # 26196155	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R RoHS: Compliant	375	250:$1.4135 100:$1.4288 25:$1.7130 10:$1.7326 7:$1.9747
IRFH7911TRPBF DISTI # IRFH7911TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R (Alt: IRFH7911TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRFH7911TRPBF DISTI # IRFH7911TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7911TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.9709 8000:$0.9359 16000:$0.9019 24000:$0.8709 40000:$0.8559
IRFH7911TRPBF DISTI # SP001577920	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R (Alt: SP001577920) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€1.1999 8000:€0.9999 16000:€0.9229 24000:€0.8569 40000:€0.7999
IRFH7911TRPBF DISTI # 70019702	Infineon Technologies AG	MOSFET,DUAL N-CHANNEL,30V,POL,PQFN5X6 RoHS: Compliant	0	4000:$2.3900 8000:$2.3420 20000:$2.2710 40000:$2.1750 100000:$2.0320
IRFH7911TRPBF DISTI # 942-IRFH7911TRPBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 8.6mOhms 8.3nC RoHS: Compliant	8011	1:$2.4300 10:$2.0700 100:$1.6600 500:$1.4500 1000:$1.2000 4000:$1.0800
IRFH7911TRPBF DISTI # C1S322000604629	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R RoHS: Compliant	4000	4000:$1.1100
IRFH7911TRPBF DISTI # C1S322000576733	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R RoHS: Compliant	375	250:$1.4135 100:$1.4288 25:$1.7130 10:$1.7326

画像	モデル	説明
	Mfr.#: IRFH7936TRPBF OMO.#: OMO-IRFH7936TRPBF	MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC
	Mfr.#: IRFH7934TR2PBF OMO.#: OMO-IRFH7934TR2PBF	MOSFET MOSFT 30V 24A 3.5mOhm 20nC
	Mfr.#: IRFH7921TR2PBF OMO.#: OMO-IRFH7921TR2PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 15A PQFN56
	Mfr.#: IRFH7923 OMO.#: OMO-IRFH7923-1190	ブランドニューオリジナル
	Mfr.#: IRFH7923PBF OMO.#: OMO-IRFH7923PBF-1190	ブランドニューオリジナル
	Mfr.#: IRFH7932 OMO.#: OMO-IRFH7932-1190	ブランドニューオリジナル
	Mfr.#: IRFH7932PBF OMO.#: OMO-IRFH7932PBF-1190	ブランドニューオリジナル
	Mfr.#: IRFH7936TRPBF OMO.#: OMO-IRFH7936TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 20A PQFN
	Mfr.#: IRFH7932TRPBF OMO.#: OMO-IRFH7932TRPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
	Mfr.#: IRFH7934TRPBF OMO.#: OMO-IRFH7934TRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.5mOhms 20nC

IRFH7911TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes