IRLHS6376TR2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PQFN-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

3.6 A

Rds On - Drain-Source Resistance:

63 mOhms

Vgs th - Gate-Source Threshold Voltage:

12 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

2.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

6.6 W

Configuration:

Dual

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Transistor Type:

2 N-Channel

Width:

2 mm

Brand:

Infineon / IR

Forward Transconductance - Min:

8.8 S

Fall Time:

9.4 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

400

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

11 nS

Typical Turn-On Delay Time:

4.4 nS

Part # Aliases:

SP001550442

Unit Weight:

0.017637 oz

Tags

IRLHS6376T, IRLHS637, IRLHS63, IRLHS6, IRLHS, IRLH, IRL