SIHD7N60ET-GE3

Mfr. #:: SIHD7N60ET-GE3
メーカー:: Vishay / Siliconix
説明:: RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
ライフサイクル:: メーカー新製品
データシート:: SIHD7N60ET-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: SIHD7N60ET-GE3 詳しくは

製品属性
属性値

メーカー: Vishay / Siliconix

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: E

包装: リール

単位重量: 0.050717 oz

取り付けスタイル: SMD / SMT

商標名: Eシリーズ

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 78 W

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: 4 V

Id-連続-ドレイン-電流: 7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Rds-On-Drain-Source-Resistance: 600 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 20 nC

Tags: SIHD7N60ET, SIHD7, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD7N60ET-GE3 詳しくは

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

モデル	メーカー	説明	ストック	価格
SIHD7N60ET-GE3 DISTI # 78-SIHD7N60ET-GE3	Vishay Intertechnologies	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS: Compliant	0	2000:$0.8750 4000:$0.8430

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