2N3739 PBFREE

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-66-2

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

300 V

Collector- Base Voltage VCBO:

325 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

2.5 V

Gain Bandwidth Product fT:

10 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

Series:

2N37

DC Current Gain hFE Max:

200 at 100 mA, 10 V

Packaging:

Tube

Brand:

Central Semiconductor

Continuous Collector Current:

1 A

DC Collector/Base Gain hfe Min:

40 at 100 mA, 10 V

Pd - Power Dissipation:

20 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

30

Subcategory:

Transistors

Tags

2N373, 2N37, 2N3