NTHD4N02FT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

ChipFET-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

3.9 A

Rds On - Drain-Source Resistance:

80 mOhms

Vgs - Gate-Source Voltage:

12 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

910 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.05 mm

Length:

3.05 mm

Product:

MOSFET Small Signal

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

1.65 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

6 S

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

9 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

10 ns

Typical Turn-On Delay Time:

5 ns

Unit Weight:

0.002998 oz

Tags

NTHD4N02FT1G, NTHD4N02FT, NTHD4N, NTHD4, NTHD, NTH