IPI100N10S3-05

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

4.8 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Tradename:

OptiMOS

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Series:

OptiMOS-T

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon Technologies

Fall Time:

20 ns

Product Type:

MOSFET

Rise Time:

17 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

60 ns

Typical Turn-On Delay Time:

34 ns

Part # Aliases:

IPI100N10S305AKSA1 IPI1N1S35XK SP000407128

Unit Weight:

0.073511 oz

Tags

IPI100N10, IPI100N1, IPI100N, IPI10, IPI1, IPI