We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2500In Stock |
|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 30V 8.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2500In Stock |
|
| SI4425BDY-T1-GE3 DISTI # SI4425BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4425BDY-T1-GE3 DISTI # 26R1875 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4425BDY-T1-GE3 DISTI # 15R5010 | Vishay Intertechnologies | P CH MOSFET,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):19mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes | 0 |
|
| SI4425BDY-T1-GE3. DISTI # 28AC2137 | Vishay Intertechnologies | Transistor Polarity:P Channel,Continuous Drain Current Id:8.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3mV,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: No | 0 |
|
| SI4425BDY-T1-GE3 DISTI # 781-SI4425BDY-GE3 | Vishay Intertechnologies | MOSFET 30V 11.4A 2.5W 12mohm @ 10V RoHS: Compliant | 3960 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: SI4425BDY-T1-E3 OMO.#: OMO-SI4425BDY-T1-E3 |
MOSFET 30V 11A 2.5W |
|
|
Mfr.#: SI4425BDY-T1-GE3 OMO.#: OMO-SI4425BDY-T1-GE3 |
MOSFET 30V 11.4A 2.5W 12mohm @ 10V |
|
Mfr.#: SI4425BDY-T1-GE3 OMO.#: OMO-SI4425BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 11.4A 2.5W 12mohm @ 10V |
|
Mfr.#: SI4425BDY-T1-E3-CUT TAPE |
ブランドニューオリジナル |
|
|
Mfr.#: SI4425BD , HZU18BTR OMO.#: OMO-SI4425BD-HZU18BTR-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SI4425BDY OMO.#: OMO-SI4425BDY-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SI4425BDY-T1 OMO.#: OMO-SI4425BDY-T1-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SI4425BDY-T1 E3 OMO.#: OMO-SI4425BDY-T1-E3-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SI4425BDY-T1-E3 OMO.#: OMO-SI4425BDY-T1-E3-VISHAY |
MOSFET P-CH 30V 8.8A 8-SOIC |
|
|
Mfr.#: SI4425BDY-T1-E3. OMO.#: OMO-SI4425BDY-T1-E3--1190 |
FOR NEW DESIGNS USE SI4425DDY-T1-GE3 ROHS COMPLIANT: NO |