IXFT20N100P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-268-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

570 mOhms

Vgs th - Gate-Source Threshold Voltage:

6.5 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

126 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

660 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Height:

5.1 mm

Length:

16.05 mm

Series:

IXFT20N100

Transistor Type:

1 N-Channel

Type:

Polar Power MOSFET HiPerFET

Width:

14 mm

Brand:

IXYS

Forward Transconductance - Min:

8 S

Fall Time:

45 ns

Product Type:

MOSFET

Rise Time:

37 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

56 ns

Typical Turn-On Delay Time:

40 ns

Unit Weight:

0.158733 oz

Tags

IXFT20, IXFT2, IXFT, IXF