ZXT13P12DE6TC

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-6

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 12 V

Collector- Base Voltage VCBO:

- 29 V

Emitter- Base Voltage VEBO:

7.5 V

Collector-Emitter Saturation Voltage:

- 150 mV

Maximum DC Collector Current:

4 A

Gain Bandwidth Product fT:

55 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

300 at 10 mA, 2 V

Height:

1.3 mm

Length:

3.1 mm

Packaging:

Reel

Width:

1.8 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

- 4 A

DC Collector/Base Gain hfe Min:

300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 4 A, 2 V, 20 at 15 A, 2 V

Pd - Power Dissipation:

1.1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

10000

Subcategory:

Transistors

Unit Weight:

0.000229 oz

Tags

ZXT13P12DE6T, ZXT13P1, ZXT13P, ZXT13, ZXT1, ZXT