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IRF7907PBF

IRF7907PBF
Mfr. #:
IRF7907PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7907PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7907PBF DatasheetIRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
FETs - Arrays
Series
HEXFETR
Packaging
Tube Alternate Packaging
Unit-Weight
0.019048 oz
Mounting-Style
SMD/SMT
Package-Case
8-SOIC (0.154", 3.90mm Width)
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
2 Channel
Supplier-Device-Package
8-SO
Configuration
Dual
FET-Type
2 N-Channel (Dual)
Power-Max
2W
Transistor-Type
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
850pF @ 15V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
9.1A, 11A
Rds-On-Max-Id-Vgs
16.4 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Charge-Qg-Vgs
10nC @ 4.5V
Pd-Power-Dissipation
2.0 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
3.4 ns 5.3 ns
Rise-Time
9.3 ns 14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
9.1 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
20.5 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
8 ns 13 ns
Typical-Turn-On-Delay-Time
6 ns 8 ns
Qg-Gate-Charge
6.7 nC
Channel-Mode
Enhancement
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube
***ical
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 9.1A/11A SOIC8
***i-Key
MOSFET N-CHAN DUAL 30V 8-SOIC
***ronik
2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm
***ment14 APAC
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W
Part # Mfg. Description Stock Price
IRF7907PBF
DISTI # IRF7907PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF7907PBF
    DISTI # 70017286    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8
    RoHS: Compliant    		0
    • 3800:$1.3400
    • 7600:$1.3130
    • 19000:$1.2730
    • 38000:$1.2190
    • 95000:$1.1390
    IRF7907PBF
    DISTI # 942-IRF7907PBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
    RoHS: Compliant    		0
      IRF7907PBFInternational Rectifier 2849
        IRF7907PBF
        DISTI # 1843031        		Infineon Technologies AGMOSFET,NN CH,30V,9.1A,SO8
        RoHS: Compliant        		0
        • 1:$1.7200
        • 10:$1.5300
        • 100:$1.1900
        • 500:$0.9820
        • 1000:$0.7760
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        		 New and Original
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        Mfr.#: IRF7904TRPBF-1

        OMO.#: OMO-IRF7904TRPBF-1-1190

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        IRF7907PBF

        Mfr.#: IRF7907PBF

        OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 9.1A/11A 8SOIC
        IRF7907PBF-1

        Mfr.#: IRF7907PBF-1

        OMO.#: OMO-IRF7907PBF-1-1190

        		 New and Original
        IRF7907TRPBF

        Mfr.#: IRF7907TRPBF

        OMO.#: OMO-IRF7907TRPBF-INFINEON-TECHNOLOGIES

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        Mfr.#: IRF7902TRPBF

        OMO.#: OMO-IRF7902TRPBF-INFINEON-TECHNOLOGIES

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        Availability
        Stock:
        Available
        On Order:
        2500
        Enter Quantity:
        Current price of IRF7907PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.71
        $1.71
        10
        $1.62
        $16.23
        100
        $1.54
        $153.77
        500
        $1.45
        $726.10
        1000
        $1.37
        $1 366.80
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