DMN2013UFX-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

W-DFN5020-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

9.6 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.1 V

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

57.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.14 W

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Series:

DMN2013

Transistor Type:

2 N-Channel

Brand:

Diodes Incorporated

Fall Time:

13.7 ns

Product Type:

MOSFET

Rise Time:

20.3 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

42.5 ns

Typical Turn-On Delay Time:

8.6 ns

Tags

DMN201, DMN20, DMN2, DMN