BSL316CH6327XTSA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSOP-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

1.4 A, 1.5 A

Rds On - Drain-Source Resistance:

119 mOhms, 113 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V, 2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

600 pC, - 2.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.1 mm

Length:

3 mm

Transistor Type:

1 N-Channel, 1 P-Channel

Width:

1.5 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

2.3 S, 2.7 S

Fall Time:

1 ns, 7.5 ns

Product Type:

MOSFET

Rise Time:

2.3 ns, 6.5 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

5.8 ns, 14.3 ns

Typical Turn-On Delay Time:

3.4 ns, 5 ns

Part # Aliases:

BSL316C H6327 SP001101010

Unit Weight:

0.000522 oz

Tags

BSL316CH, BSL316, BSL31, BSL3, BSL