SI1922EDH-T1-GE3

Mfr. #:: SI1922EDH-T1-GE3
メーカー:: Vishay
説明:: MOSFET 2N-CH 20V 1.3A SOT-363
ライフサイクル:: メーカー新製品
データシート:: SI1922EDH-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SI1922EDH-T1-GE3 詳しくは

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: ICチップ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI1988DH-T1-GE3

単位重量: 0.000265 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 6-TSSOP, SC-88, SOT-363

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: SC-70-6 (SOT-363)

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 1.25W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: -

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 1.3A

Rds-On-Max-Id-Vgs: 198 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 2.5nC @ 8V

Pd-電力損失: 1.25 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 220 ns

立ち上がり時間: 80 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 1.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 198 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 480 ns

典型的なターンオン遅延時間: 43 ns

Qg-Gate-Charge: 1.6 nC

Tags: SI1922EDH-T1, SI1922EDH-T, SI1922, SI192, SI19, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1922EDH-T1-GE3 詳しくは

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

モデル	メーカー	説明	ストック	価格
SI1922EDH-T1-GE3 DISTI # V36:1790_09216775	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R RoHS: Compliant	0	3000000:$0.1227 1500000:$0.1229 300000:$0.1315 30000:$0.1444 3000:$0.1465
SI1922EDH-T1-GE3 DISTI # V72:2272_09216775	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R RoHS: Compliant	0
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	40575In Stock	1000:$0.1655 500:$0.2141 100:$0.2725 10:$0.3650 1:$0.4300
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	40575In Stock	1000:$0.1655 500:$0.2141 100:$0.2725 10:$0.3650 1:$0.4300
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	39000In Stock	75000:$0.1197 30000:$0.1210 15000:$0.1276 6000:$0.1370 3000:$0.1465
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	150000:$0.1178 75000:$0.1198 30000:$0.1219 15000:$0.1263 9000:$0.1309 6000:$0.1360 3000:$0.1414
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1922EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0949 18000:$0.0979 12000:$0.0999 6000:$0.1049 3000:$0.1079
SI1922EDH-T1-GE3 DISTI # SI1922EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R (Alt: SI1922EDH-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1039 18000:€0.1109 12000:€0.1209 6000:€0.1399 3000:€0.2059
SI1922EDH-T1-GE3 DISTI # 65T1686	Vishay Intertechnologies	Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 65T1686) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.1540 500:$0.1990 250:$0.2210 100:$0.2420 50:$0.2840 25:$0.3250 1:$0.4300
SI1922EDH-T1-GE3 DISTI # 65T1686	Vishay Intertechnologies	Dual MOSFET, Dual N Channel, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV RoHS Compliant: Yes	0	1000:$0.1560 500:$0.2010 250:$0.2230 100:$0.2440 50:$0.2860 25:$0.3280 1:$0.4340
SI1922EDH-T1-GE3 DISTI # 64T4056	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes	860	1000:$0.1840 500:$0.2290 250:$0.2510 100:$0.2720 50:$0.3140 25:$0.3560 1:$0.4620
SI1922EDH-T1-GE3. DISTI # 28AC2118	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:1.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.165ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1.25W RoHS Compliant: No	0	30000:$0.0980 18000:$0.1000 12000:$0.1030 6000:$0.1080 1:$0.1110
SI1922EDH-T1-GE3 DISTI # 70616150	Vishay Siliconix	SI1922EDH-T1-GE3 Dual N-channel MOSFET Transistor,1.3 A,20 V,6-Pin SOT-363 RoHS: Compliant	0	300:$0.2700 600:$0.2320 1500:$0.2030 3000:$0.1830
SI1922EDH-T1-GE3 DISTI # 78-SI1922EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	14142	1:$0.4200 10:$0.3240 100:$0.2410 500:$0.1980 1000:$0.1530 3000:$0.1390 6000:$0.1300 9000:$0.1210 24000:$0.1150
SI1922EDH-T1-GE3 DISTI # 8123091P	Vishay Intertechnologies	TRANS MOSFET N-CH 20V 1.3A 6-PIN, RL	4550	3000:£0.1100 1500:£0.1150 600:£0.1440 300:£0.1820
SI1922EDH-T1-GE3 DISTI # TMOS2002	Vishay Intertechnologies	Dual N-CH 20V 1,3A/4,5V SOT363 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.1821 6000:$0.1717 9000:$0.1612 12000:$0.1456 18000:$0.1404
SI1922EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	Americas - 24000
SI1922EDH-T1-GE3 DISTI # 2056714	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363 RoHS: Compliant	860	3000:$0.2280 1000:$0.2320 500:$0.3000 100:$0.3650 10:$0.4900 1:$0.6480
SI1922EDH-T1-GE3 DISTI # 2056714RL	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363 RoHS: Compliant	0	3000:$0.2280 1000:$0.2320 500:$0.3000 100:$0.3650 10:$0.4900 1:$0.6480
SI1922EDH-T1-GE3 DISTI # 2056714	Vishay Intertechnologies	MOSFET, NN CH, 20V, 1.3A, SOT363	1755	500:£0.1540 250:£0.1700 100:£0.1860 25:£0.2730 5:£0.2850

画像	モデル	説明
	Mfr.#: SI1922EDH-T1-GE3 OMO.#: OMO-SI1922EDH-T1-GE3	MOSFET 20V Vds 8V Vgs SC70-6
	Mfr.#: SI1922EDH OMO.#: OMO-SI1922EDH-1190	ブランドニューオリジナル
	Mfr.#: SI1922EDH-T OMO.#: OMO-SI1922EDH-T-1190	ブランドニューオリジナル
	Mfr.#: SI1922EDH-T1-E3 OMO.#: OMO-SI1922EDH-T1-E3-1190	ブランドニューオリジナル
	Mfr.#: SI1922EDH-T1-GE3 OMO.#: OMO-SI1922EDH-T1-GE3-VISHAY	MOSFET 2N-CH 20V 1.3A SOT-363
	Mfr.#: SI1922EDH-T1-GE3-CUT TAPE OMO.#: OMO-SI1922EDH-T1-GE3-CUT-TAPE-1190	ブランドニューオリジナル

SI1922EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes